9A Current 1500V N Channel MOSFET KIA Semicon Tech KNM48150A with Low RDS ON and Fast Recovery Diode
Key Attributes
Model Number:
KNM48150A
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
9A
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
54.6pF
Input Capacitance(Ciss):
3.385nF
Output Capacitance(Coss):
176pF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
KNM48150A
Package:
TO-247
Product Description
Product Overview
This 9A, 1500V N-Channel MOSFET features a low RDS(ON) of 2.8 (typ.) at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA
- Part Number: KNM48150A
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250uA | 1500 | - | - | V |
| Drain-source leakage current | IDSS | VDS=1500V, VGS=0V | - | - | 1 | uA |
| Drain-source leakage current | IDSS | VDS=1200V, TC=125C | - | - | 500 | uA |
| Gate-source forward leakage | IGSS | VGS=30V, VDS=0V | - | - | 100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=5.4A | - | 2.8 | 4 | |
| Gate threshold voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.5 | - | 4.5 | V |
| Gate Resistance | Rg | f=1 MHz Gate DC Bias=0,Test signal level=20mVopen drain | - | 1.17 | - | |
| Input capacitance | Ciss | VDS=25V,VGS=0V f=1MHz | - | 3385 | - | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V f=1MHz | - | 54.6 | - | pF |
| Output capacitance | Coss | VDS=25V,VGS=0V f=1MHz | - | 176 | - | pF |
| Total gate charge(10V) | Qg | VDD=750V, ID=9A VGS=0~10V | - | 68 | - | nC |
| Gate-source charge | Qgs | VDD=750V, ID=9A VGS=0~10V | - | 21 | - | nC |
| Gate-drain charge | Qgd | VDD=750V, ID=9A VGS=0~10V | - | 25 | - | nC |
| Turn-on delay time | td(on) | VDD=750V,VGS=10V, RG=25, ID=9A | - | 65 | - | ns |
| Rise time | tr | VDD=750V,VGS=10V, RG=25, ID=9A | - | 186 | - | ns |
| Turn-off delay time | td(off) | VDD=750V,VGS=10V, RG=25, ID=9A | - | 82 | - | ns |
| Fall time | tf | VDD=750V,VGS=10V, RG=25, ID=9A | - | 114 | - | ns |
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | - | - | 9 | A |
| Pulsed Source Current | ISM | Integral PN-diode in MOSFET | - | - | 36 | A |
| Diode forward voltage | VSD | IS=9A,VGS=0V | - | - | 1.3 | V |
| Reverse Recovery Time | trr | VGS=0V,IF=9A, dIF/dt=100A/s | - | 461 | - | nS |
| Reverse Recovery Charge | Qrr | VGS=0V,IF=9A, dIF/dt=100A/s | - | 3.36 | - | nC |
| Parameter | Symbol | Unit | Rating |
| Continuous Drain Current | ID | A | 9 |
| Pulsed Drain Current | IDM | A | 36 |
| Single Pulse Avalanche Energy | EAS | mJ | 450 |
| Maximum Power Dissipation | PD | W | 320 |
| Derate above 25C | W/C | 2.56 | |
| Soldering Temperature | TL | C | 300 |
| Storage Temperature Range | TJ&TSTG | C | -55 to 150 |
| Thermal Resistance, Junction-to-Case | RJC | C/W | 0.39 |
| Thermal Resistance, Junction-to-Ambient | RJA | C/W | 55 |
2508261745_KIA-Semicon-Tech-KNM48150A_C7465118.pdf
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