Low On Resistance P Channel Mosfet KIA Semicon Tech KPE4403B in SOP 8 Package for Switching Circuits
Key Attributes
Model Number:
KPE4403B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
40mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.56W
Input Capacitance(Ciss):
490pF
Gate Charge(Qg):
7.9nC@10V
Mfr. Part #:
KPE4403B
Package:
SOP-8
Product Description
Product Overview
The KIA SEMICONDUCTORS KPE4403B is a -5A, -30V P-CHANNEL MOSFET designed for various power management applications. It features a low on-resistance of 40m (typ.) at VGS=-10V and supports -5V logic level control. Packaged in a SOP-8, this Pb-free and RoHS compliant MOSFET is ideal for load switching, switching circuits, high-speed line drivers, and general power management functions.
Product Attributes
- Brand: KIA
- Part Number: KPE4403B
- Package: SOP-8
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250µA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0°C, TA=25°C | -1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0°C, TA=125°C | -100 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250µA | -1.2 | -1.6 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4A | 40 | 50 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | 63 | 80 | mΩ | |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 490 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 68 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 45 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, ID=-4A, VGS=-10V | 7.9 | nC | ||
| Gate Source Charge | Qgs | VDS=-15V, ID=-4A, VGS=-10V | 0.6 | nC | ||
| Gate Drain Charge | Qg | VDS=-15V, ID=-4A, VGS=-10V | 2.5 | nC | ||
| Turnon Delay Time | td(on) | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 7 | ns | ||
| Turnon Rise Time | tr | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 4.5 | ns | ||
| TurnOff Delay Time | td(off) | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 23 | ns | ||
| TurnOff Fall Time | tf | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 8.4 | ns | ||
| Source drain current(Body Diode) | ISD | TA=25°C | -2 | A | ||
| Forward on voltage | VSD | Tj=25°C, ISD=-4A, VGS=0V | -0.88 | -1.2 | V | |
| Maximum Power Dissipation | PD | TA =25°C | 1.56 | W | ||
| Maximum Power Dissipation | PD | TA =70°C | 1.25 | W | ||
| Thermal Resistance Junction-Ambient | RθJA | 80 | °C/W | |||
| Maximum Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -50 | 150 | °C |
2410121242_KIA-Semicon-Tech-KPE4403B_C5156070.pdf
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