Low On Resistance N Channel 20 Volt MOSFET KUU WNM2016 for Load Switch and DC DC Converter Performance
Key Attributes
Model Number:
WNM2016
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
45mΩ@4.5V4.2A
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
66pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
740pF@15V
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
WNM2016
Package:
SOT-23
Product Description
Product Overview
This N-Channel 20-V (D-S) MOSFET in a SOT-23 package features ultra-low on-resistance and is available in tape and reel. It is designed for applications such as load switches for portable devices and DC/DC converters.
Product Attributes
- Brand: WNM (implied by datasheet name)
- Origin: Yongyutai (www.yongyutai.com)
- Material: Plastic-Encapsulated
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 4.2 | A | |||
| Pulsed Diode Current | IDM | 33 | A | |||
| Power Dissipation | PD | (Ta=25) | 1.25 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (t5s) | 100 | /W | ||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 0.6 | 1.2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 12V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 16V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 4.5V, ID = 4.2A | 35 | 45 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = 2.5V, ID = 3.6A | 50 | 80 | m | |
| Forward transconductance | gfs | VDS = 4.5V, ID = 4.2A | 5.8 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS=0V | -0.8 | -1.2 | V | |
| Continuous Source-Drain Diode Current | IS | -1.3 | A | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 15V,VGS =0V, f=1MHz | 740 | pF | ||
| Output capacitance | Coss | VDS = 15V,VGS =0V, f=1MHz | 90 | pF | ||
| Reverse transfer capacitance | Crss | VDS = 15V,VGS =0V, f=1MHz | 66 | pF | ||
| Total gate charge | Qg | VDS = 15V,VGS = 4.5V, ID = 4.2A | 8.0 | nC | ||
| Gate-source charge | Qgs | VDS = 15V,VGS = 4.5V, ID = 4.2A | 1.8 | nC | ||
| Gate-drain charge | Qgd | VDS = 15V,VGS = 4.5V, ID = 4.2A | 1.7 | nC | ||
| Gate resistance | Rg | f=1MHz | 6.5 | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDS= 10V RL=6, ID 1A, VGEN= 4.5V,Rg=3 | 7.5 | ns | ||
| Rise time | tr | VDS= 10V RL=6, ID 1A, VGEN= 4.5V,Rg=3 | 10 | ns | ||
| Turn-off delay time | td(off) | VDS= 10V RL=6, ID 1A, VGEN= 4.5V,Rg=3 | 54 | ns | ||
| Fall time | tf | VDS= 10V RL=6, ID 1A, VGEN= 4.5V,Rg=3 | 26 | ns | ||
| Body Diode Characteristics | ||||||
| Body Diode Reverse Recovery Time | Trr | IF= 4.2A, dI/dt=100A/s | 16 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 4.2A, dI/dt=100A/s | 8.6 | nC | ||
2410121929_KUU-WNM2016_C22381403.pdf
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