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quality 150A 30V N Channel Power MOSFET KIA Semicon Tech KND2803T with Low RDS ON and Super Low Gate Charge factory
quality 150A 30V N Channel Power MOSFET KIA Semicon Tech KND2803T with Low RDS ON and Super Low Gate Charge factory
quality 150A 30V N Channel Power MOSFET KIA Semicon Tech KND2803T with Low RDS ON and Super Low Gate Charge factory
quality 150A 30V N Channel Power MOSFET KIA Semicon Tech KND2803T with Low RDS ON and Super Low Gate Charge factory

150A 30V N Channel Power MOSFET KIA Semicon Tech KND2803T with Low RDS ON and Super Low Gate Charge

Key Attributes
Model Number: KND2803T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V;3.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
520pF
Input Capacitance(Ciss):
6nF
Pd - Power Dissipation:
143W
Output Capacitance(Coss):
610pF
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
KND2803T
Package:
TO-252
Product Description

Product Overview

150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. This device offers a low RDS(ON) of 2.4m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. It is 100% Vds and UIS tested, with a green device available. Suitable for various power applications requiring efficient switching and high current handling.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Model: KND2803T
  • Package: TO-252
  • Origin: KMOS Semiconductor

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA30--V
Gate-Source VoltageVGSVDS=0V--±20V
Continuous Drain CurrentIDTC=25°C--150A
Continuous Drain CurrentIDTC=100°C--95A
Pulsed Drain CurrentIDM@ Current-Pulsed--680A
Total Power DissipationPDTC=25°C--143W
Avalanche EnergyEASVDD=20V, VGS=10V, L=0.5mH, IAS=46A-529-mJ
Operation Junction and Storage Temperature RangeTJ,TSTG-55-150°C
Thermal Resistance, Junction-to-CaseRθJC1)--1.05°C/W
Gate Threshold VoltageVGS(th)VGS=VDS, ID=250uA1.01.82.5V
Static Drain-Source On-ResistanceRDS(ON)VGS=10V, ID=30A-2.43.0mΩ
Static Drain-Source On-ResistanceRDS(ON)VGS=4.5V, ID=15A-3.24.2mΩ
Input CapacitanceCissVDS=15V, VGS=0V , f=1.0MHz-6000-pF
Output CapacitanceCossVDS=15V, VGS=0V , f=1.0MHz-610-pF
Reverse Transfer CapacitanceCrssVDS=15V, VGS=0V , f=1.0MHz-520-pF
Turn-On Delay Timetd(on)VDS=15V, VGS=10V, RG=3.0Ω, ID=30A-12-ns
Rise TimetrVDS=15V, VGS=10V, RG=3.0Ω, ID=30A-26-ns
Turn-Off Delay Timetd(off)VDS=15V, VGS=10V, RG=3.0Ω, ID=30A-80-ns
Fall TimetfVDS=15V, VGS=10V, RG=3.0Ω, ID=30A-45-ns
Total Gate ChargeQgVDS=15V, VGS=10V , ID=30A-100-nC
Gate-Source ChargeQgsVDS=15V, VGS=10V , ID=30A-10-nC
Gate-Drain ChargeQgVDS=15V, VGS=10V , ID=30A-18-nC
Source-Drain Current (Body Diode)ISD1),5)--150A
Diode Forward VoltageVSDVGS=0V, ISD=30A,TJ=25°C--1.2V
Reverse Recovery TimetrrTJ=25°C, IF=30A, di/dt=100A/μs-25-nS
Reverse Recovery ChargeQrrTJ=25°C, IF=30A, di/dt=100A/μs-15-nC

2509041415_KIA-Semicon-Tech-KND2803T_C51883042.pdf

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