N Channel Enhancement Mode Power MOSFET JUXING JX3400 with Maximum DC Current and Low On Resistance
Product Overview
The JX3400 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
- Brand: JX
- Model: 3400
- Type: N-Channel Enhancement Mode Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | Value |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 30 | V | |||
| Zero Gate Voltage Drain current | IDSS | VDS=24V, VGS=0V | 1 | uA | |||
| Gate-body Leakage | IGSS | VDS=12V, VDS=0V | 100 | nA | |||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.8A | 35 | m | |||
| VGS=4.5V, ID=5A | 40 | m | |||||
| VGS=2.5V, ID=4A | 52 | m | |||||
| Forward Transconductance | gfs | VDS=5V, ID=5A | 8 | S | |||
| Gate-Threshold Voltage* | VGS(th) | VDS=VGS, ID=250uA | 0.7 | 1.4 | V | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 1050 | pF | |||
| Output Capacitance | Coss | 99 | |||||
| Reverse Transfer Capacitance | Crss | 77 | |||||
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1MHz | 3.6 | ||||
| Switching Characteristics | VGS=10V, RL=2.7, VDS=15V, RGEN=3 | 5 | ns | ||||
| 7 | |||||||
| 40 | |||||||
| 6 | |||||||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 1.0 | V | |||
| Continuous Drain Current | ID | 5.8 | A | ||||
| Drain Current-Pulsed(note 1) | IDM | 30 | A | ||||
| Power Dissipation | PD | 350 | mW | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -50 | +150 | ||||
| Thermal Resistance From Junction to Ambient (note 2) | RJA | 357 | /W |
2411220527_JUXING-JX3400_C19193798.pdf
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