N Channel MOSFET KIA Semicon Tech KNP3610A Ideal for Power Switching and High Frequency Applications
Key Attributes
Model Number:
KNP3610A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
20mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
208pF
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
3.83nF
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
KNP3610A
Package:
TO-220
Product Description
Product Overview
The KNX3610A is an N-CHANNEL MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX3610A
- Origin: KIA SEMICONDUCTORS (implied)
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | |
| Absolute Maximum Ratings | VDS | 100 | V | ||
| VGS | +20 | V | |||
| ID | 60 | A | |||
| IDM | 240 | A | Pulsed drain current (Note1) | ||
| EAS | 250 | mJ | Single pulse avalanche energy(Note2) | ||
| PD | 160 | W/C | Derating Factor above 25C | ||
| TJ, TSTG | -55 to175 | C | Operation junction and temperature range | ||
| Thermal Characteristics | RJC | 0.93 | C /W | Thermal Resistance, Junction-to-Case | |
| Electrical Characteristics | BVDSS | 100 | V | VGS=0V,ID=250A | |
| IDSS | - | 1 | A | VDS=80V, VGS=0V | |
| IGSS(F) | - | 100 | nA | VGS=+20V | |
| IGSS(R) | - | -100 | nA | VGS=-20V | |
| RDS(on) | - | 17-20 | m | VGS=10V,ID=20A (typ. 17m) | |
| VGS(th) | 2.0-4.0 | V | VDS=VGS, ID=250A (typ. 3.0V) | ||
| gfs | - | 20 | S | VDS=5V,ID=20A | |
| Dynamic Characteristics | Qg | - | 82 | nC | VDD=80V, VGS=10V ID =30A |
| Qgs | - | 24 | - | ||
| Qgd | - | 28 | - | ||
| td(on) | - | 13 | ns | VDD=50V, ID=30A, RGEN=3, VGS=10V | |
| tr | - | 10 | - | ||
| td(off) | - | 21 | - | ||
| tf | - | 18 | - | ||
| Switching Characteristics | Ciss | - | 3830 | pF | VDS=25V,VGS=0V, f=1MHz |
| Coss | - | 235 | - | ||
| Crss | - | 208 | - | ||
| Drain-Source Diode Characteristics | VSD | - | 1.2 | V | VGS=0V,IS=20A |
2409302232_KIA-Semicon-Tech-KNP3610A_C2896653.pdf
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