Low RDSon P Channel MOSFET KUU SI2319 Suitable for Battery Switches and DC DC Converter Applications
Key Attributes
Model Number:
SI2319
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.4A
RDS(on):
65mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
595pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
SI2319
Package:
SOT-23-3L
Product Description
Product Overview
The SI2319 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices, DC/DC converters, and battery switches. It features low RDS(on) and a surface mount package, offering efficient performance for various power management applications.
Product Attributes
- Brand: Yongyutai
- Model: SI2319
- Type: P-Channel MOSFET
- Technology: TrenchFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -4.4 | A | |||
| Pulsed Diode Current | IDM | -20 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | -2.1 | A | |||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 166 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250A | -40 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250A | -1 | -3 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -40V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = -10V, ID = -3A | 40 | 45 | m | |
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -2.5A | 56 | 65 | m | |
| Forward transconductance | gfs | VDS = -15V, ID = -3.2A | 10 | S | ||
| Diode forward voltage | VSD | IS= -1.25A, VGS=0V | -0.8 | -1.28 | V | |
| Input capacitance | Ciss | VDS = -20V, VGS =0V, f=1MHz | 595 | pF | ||
| Output capacitance | Coss | VDS = -20V, VGS =0V, f=1MHz | 85 | pF | ||
| Reverse transfer capacitance | Crss | VDS = -20V, VGS =0V, f=1MHz | 65 | pF | ||
| Total gate charge | Qg | VDS = -20V, VGS = - 10V, ID = -3.1A | 13.6 | 21 | nC | |
| Gate-source charge | Qgs | VDS = -20V, VGS = - 10V, ID = -3.1A | 2.5 | nC | ||
| Gate-drain charge | Qgd | VDS = -20V, VGS = - 10V, ID = -3.1A | 3.3 | nC | ||
| Gate resistance | Rg | f=1MHz | 4.5 | |||
| Turn-on delay time | td(on) | VDS=-20V RL=8, ID = -2.5A, VGEN=-4.5 V,Rg=1 | 40 | 60 | ns | |
| Rise time | tr | VDS=-20V RL=8, ID = -2.5A, VGEN=-4.5 V,Rg=1 | 27 | 41 | ns | |
| Turn-off delay time | td(off) | VDS=-20V RL=8, ID = -2.5A, VGEN=-4.5 V,Rg=1 | 18 | 27 | ns | |
| Fall time | tf | VDS=-20V RL=8, ID = -2.5A, VGEN=-4.5 V,Rg=1 | 10 | 20 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25 | -1.28 | A | ||
| Pulsed Diode forward Current | ISM | -20 | A |
2410121742_KUU-SI2319_C41347897.pdf
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