Power MOSFET 190A 40V N Channel KIA Semicon Tech KNP2404N with Low Gate Charge and Fast Diode
Key Attributes
Model Number:
KNP2404N
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
420pF
Number:
-
Output Capacitance(Coss):
1.75nF
Input Capacitance(Ciss):
3.85nF
Pd - Power Dissipation:
333W
Gate Charge(Qg):
97nC@10V
Mfr. Part #:
KNP2404N
Package:
TO-220
Product Description
Product Overview
The KNX2404N is a 190A, 40V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features a low RDS(ON) of 4m (typ.) at VGS=10V, proprietary new trench technology, low gate charge to minimize switching loss, and a fast recovery body diode. This MOSFET is suitable for DC-DC converters, DC-DC inverters, and power supply applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX2404N
- Package: TO-220
- Brand: KIA
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-to-Source Voltage | [1] | -- | -- | 40 | V |
| VGSS | Gate-to-Source Voltage | -- | -- | 20 | ||
| ID | Continuous Drain Current | [2] | -- | -- | 190 | A |
| ID | Continuous Drain Current | [3] | -- | -- | 80 | A |
| IDM | Pulsed Drain Current at VGS=10V | [2,4] | -- | -- | 480 | A |
| EAS | Single Pulse Avalanche Energy | -- | -- | 1200 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | [3] | -- | -- | 5.0 | V/ns |
| PD | Power Dissipation | -- | -- | 333 | W | |
| Derating Factor above 25 C | -- | -- | 2 | W/ C | ||
| TL | Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | -- | -- | 300 | C | |
| TPAK | Package Body for 10 seconds | -- | -- | 260 | C | |
| TJ&TSTG | Operating and Storage Temperature Range | -55 | -- | 175 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | -- | 0.45 | -- | C /W | |
| RJA | Thermal Resistance, Junction-to-Ambient | -- | 62 | -- | ||
| Electrical Characteristics (TJ=25C, unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | -- | -- | V |
| IDSS | Drain-to-Source Leakage Current | VDS=40V, VGS=0V | -- | -- | 1 | uA |
| IDSS | Drain-to-Source Leakage Current | VDS=32V,VGS=0V, TJ =125C | -- | -- | 100 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=+20V,VDS=0V | -- | -- | +100 | nA |
| IGSS | Gate-to-Source Leakage Current | VGS=-20V, VDS=0V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(ON) | Static Drain-to-Source On-Resistance | [4] VGS=10V, ID=80A[5] | -- | 4.0 | 5.0 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 2.0 | -- | 4.0 | V |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 3850 | -- | pF |
| Coss | Output Capacitance | -- | 1750 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 420 | -- | pF | |
| Rg | Gate Series Resistance | f=1.0MHZ | -- | 1.5 | -- | |
| Qg | Total Gate Charge | VDD=20V, ID=80A, VGS=0 to 10V | -- | 97 | -- | nC |
| Qgs | Gate-to-Source Charge | -- | 18 | -- | ||
| Qgd | Gate-to-Drain (Miller) Charge | -- | 37 | -- | ||
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | VDD=20V, ID=50A, VGS= 10V RG=10 | -- | 32 | -- | nS |
| trise | Rise Time | -- | 90 | -- | ||
| td(OFF) | Turn-Off Delay Time | -- | 100 | -- | ||
| tfall | Fall Time | -- | 72 | -- | ||
| Source-Drain Body Diode Characteristics (TJ=25C, unless otherwise specified) | ||||||
| ISD | Continuous Source Current | Integral PN-diode in MOSFET | -- | -- | 190 | A |
| ISM | Pulsed Source Current | [4] | -- | -- | 480 | A |
| VSD | Diode Forward Voltage | IS=80A, VGS=0V | -- | -- | 1.3 | V |
| trr | Reverse recovery time | VGS=0V ,IF=80A, diF/dt=100A/s | -- | 76 | -- | ns |
| Qrr | Reverse recovery charge | -- | 35 | -- | nC | |
2409302232_KIA-Semicon-Tech-KNP2404N_C2839429.pdf
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