Ultra high speed switching diode KEC BAV99-RTK/P with low forward voltage and small total capacitance
Product Overview
The BAV99 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.
Product Attributes
- Brand: SEMICONDUCTOR
- Type: SILICON EPITAXIAL PLANAR DIODE
- Application: ULTRA HIGH SPEED SWITCHING APPLICATION
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | V | IF=1mA | - | 0.60 | - | |
| Forward Voltage | VF(2) | V | IF=10mA | - | 0.72 | - | |
| Forward Voltage | VF(3) | V | IF=150mA | - | - | 1.25 | |
| Reverse Current | IR | A | VR=80V | - | - | 0.5 | |
| Total Capacitance | CT | pF | VR=0, f=1MHz | - | 0.9 | 3.0 | |
| Reverse Recovery Time | trr | nS | IF=10mA | - | 1.6 | 4.0 | |
| Maximum (Peak) Reverse Voltage | VRM | 85 | V | ||||
| Reverse Voltage | VR | 80 | V | ||||
| Continuous Forward Current | IF | 250 | mA | ||||
| Surge Current (10ms) | IFSM | 2 | A | ||||
| Power Dissipation | PD | 225* / 300** | mW | *Note1 / **Note2 | |||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55150 |
*Note1 : Package Mounted On FR-5 Board (25.419.051.57mm)
**Note2 : Package Mounted On 99.5% Alumina (1080.6mm)
| DIM | MILLIMETERS | SOT-23 |
|---|---|---|
| A | 2.93 | |
| B | 0.20 | |
| C | 1.30+0.20/-0.15 | |
| D | 0.40+0.15/-0.05 | |
| E | 2.40+0.30/-0.20 | |
| G | 1.90 | |
| H | 0.95 | |
| J | 0.13+0.10/-0.05 | |
| K | 0.00 ~ 0.10 | |
| L | 0.55 | |
| M | 0.1 MAX | |
| P | 0.20 MIN | |
| Q | 1.00+0.20/-0.10 |
Pinout:
1. CATHODE
2. ANODE
3. ANODE 1 / CATHODE 2
2410121837_KEC-BAV99-RTK-P_C180489.pdf
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