N Channel TrenchFET Power MOSFET KUU KSI2302CDS T1 GE3 Ideal for Various Power Management Solutions
Key Attributes
Model Number:
KSI2302CDS-T1-GE3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
RDS(on):
59mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
300pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KSI2302CDS-T1-GE3
Package:
SOT-23
Product Description
Product Overview
This N-Channel TrenchFET Power MOSFET is designed for efficient switching applications. It features a low on-resistance and fast switching speeds, making it suitable for various power management solutions.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Plastic-Encapsulate
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Unit |
| Maximum Ratings | VDS | Drain-Source voltage | 20 | V | ||
| VGS | Gate-Source voltage | ±10 | V | |||
| ID | Drain current | 2.9 | A | |||
| PD | Power Dissipation | 1 | W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | - | 150 | ||
| Electrical Characteristics | V(BR)DSS | VGS=0V,ID=250uA | 20 | V | ||
| Vth(GS) | VDS= VGS, ID=250 uA | 0.5 | 0.75 | 1.2 | V | |
| IGSS | VDS=0V, VGS=±10V | ±100 | nA | |||
| IDSS | VDS=20V, VGS=0V | 1 | uA | |||
| rDS(ON) | VGS=2.5V, ID=2.5A | 37 | 59 | mΩ | ||
| rDS(ON) | VGS=4.5V, ID=2.9A | 30 | 45 | mΩ | ||
| gfs | VDS=5V, ID=2.9A | 9.5 | S | |||
| Dynamic Characteristics | Ciss | VDS=10V, VGS=0V, f=1MHz | 300 | pF | ||
| Coss | VDS=10V, VGS=0V, f=1MHz | 120 | pF | |||
| Crss | VDS=10V, VGS=0V, f=1MHz | 80 | pF | |||
| Switching Capacitance | td(on) | VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω | 10 | 15 | nS | |
| tr | VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω | 50 | 85 | nS | ||
| td(off) | VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω | 17 | 45 | nS | ||
| tf | VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω | 10 | 20 | nS | ||
| Total Gate Charge | Qg | VDS=10V, ID=2.9A, VGS=4.5V | 4.0 | 10 | nC | |
| Qgs | VDS=10V, ID=2.9A, VGS=4.5V | 0.65 | nC | |||
| Qg | VDS=10V, ID=2.9A, VGS=4.5V | 1.2 | nC | |||
| Drain-Source Diode Characteristics | VSD | VGS=0V, IS=2.9A | 0.75 | 1.2 | V | |
| Is | 2.9 | A |
2512301752_KUU-KSI2302CDS-T1-GE3_C2891685.pdf
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