N Channel TrenchFET Power MOSFET KUU KSI2302CDS T1 GE3 Ideal for Various Power Management Solutions

Key Attributes
Model Number: KSI2302CDS-T1-GE3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
RDS(on):
59mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
300pF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KSI2302CDS-T1-GE3
Package:
SOT-23
Product Description

Product Overview

This N-Channel TrenchFET Power MOSFET is designed for efficient switching applications. It features a low on-resistance and fast switching speeds, making it suitable for various power management solutions.

Product Attributes

  • Brand: Not Specified
  • Origin: Not Specified
  • Material: Plastic-Encapsulate
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolTest ConditionsMINTYPMAXUnit
Maximum RatingsVDSDrain-Source voltage20V
VGSGate-Source voltage±10V
IDDrain current2.9A
PDPower Dissipation1W
TjJunction Temperature150
TstgStorage Temperature-55-150
Electrical CharacteristicsV(BR)DSSVGS=0V,ID=250uA20V
Vth(GS)VDS= VGS, ID=250 uA0.50.751.2V
IGSSVDS=0V, VGS=±10V±100nA
IDSSVDS=20V, VGS=0V1uA
rDS(ON)VGS=2.5V, ID=2.5A3759
rDS(ON)VGS=4.5V, ID=2.9A3045
gfsVDS=5V, ID=2.9A9.5S
Dynamic CharacteristicsCissVDS=10V, VGS=0V, f=1MHz300pF
CossVDS=10V, VGS=0V, f=1MHz120pF
CrssVDS=10V, VGS=0V, f=1MHz80pF
Switching Capacitancetd(on)VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω1015nS
trVDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω5085nS
td(off)VDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω1745nS
tfVDD=10V, ID=2.9A, VGS=4.5V, RGEN=6Ω1020nS
Total Gate ChargeQgVDS=10V, ID=2.9A, VGS=4.5V4.010nC
QgsVDS=10V, ID=2.9A, VGS=4.5V0.65nC
QgVDS=10V, ID=2.9A, VGS=4.5V1.2nC
Drain-Source Diode CharacteristicsVSDVGS=0V, IS=2.9A0.751.2V
Is2.9A

2512301752_KUU-KSI2302CDS-T1-GE3_C2891685.pdf

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