power device KIA Semicon Tech KNB3308A 80A 80V N channel MOSFET with low RDS ON and avalanche current
Key Attributes
Model Number:
KNB3308A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-
RDS(on):
9mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.11nF
Output Capacitance(Coss):
445pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
KNB3308A
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS 3308A is an 80A, 80V N-CHANNEL MOSFET designed for efficient power management. It features low on-state resistance (RDS(ON)=6.2m@VGS=10V) to minimize conductive losses and high avalanche current capability. This device is suitable for power supply and DC-DC converter applications. Lead-free and green device options are available.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 3308A
- Type: N-CHANNEL MOSFET
- Certifications: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Conditions | TO-252 | TO-263 | TO-247 | Units |
| Absolute Maximum Ratings | VDSS | 80 | V | |||
| VGSS | +25 | V | ||||
| ID | TC=25 C | 80* | 80 | 80 | A | |
| ID | TC=100 C | 70* | 70 | 70 | A | |
| Thermal Characteristics | Rjc | 1.04 | 0.52 | 0.44 | C/W | |
| Rja | 55 | C/W | ||||
| Electrical Characteristics | BVDSS | VGS=0V,IDS=250A | 80 | V | ||
| VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| IDSS | VDS=64V,VGS=0V, TJ=125 C | 100 | A | |||
| IGSS | VGS=+25V,VDS=0V | +100 | nA | |||
| RDS(on)1 | VGS=10V,IDS=30A | 6.2 - 9 | m | |||
| Diode Characteristics | VSD1 | ISD=40A,VGS=0V | 1.3 | V | ||
| IS3 | 80 | A | ||||
| trr | IF=40A,dl/dt=100A/s | 25 | nS | |||
| Qrr | 18.5 | nC | ||||
| Dynamic Characteristics | RG | VGS=0V, VDS=0V,F=1MHz | 1.3 | |||
| Ciss | VGS=0V, VDS=25V, F=1.0MHz | 3110 | pF | |||
| Coss | 445 | |||||
| Crss | 270 | |||||
| td(ON) | VDD=37.5V,ID=40A, VGS=10V,RG=6.8 | 20.4 | nS | |||
| tr | 63 | |||||
| td(OFF) | 67 | |||||
| tf | 43 | |||||
| Gate Charge Characteristics | Qg | VDS=37.5V, VGS=10V, ID=40A | 76 | nC | ||
| Qgs | 9.5 | |||||
| Qgd | 40 |
2410010000_KIA-Semicon-Tech-KNB3308A_C176861.pdf
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