High speed switching silicon diode KEC KDS184-RTK/HU with small SOT 23 package and AEC Q101 standard

Key Attributes
Model Number: KDS184-RTK/HU
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
80V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
KDS184-RTK/HU
Package:
SOT-23
Product Description

Product Overview

The KDS184 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix U indicates qualification to AEC-Q101 standards.

Product Attributes

  • Brand: SEMICONDUCTOR
  • Model: KDS184
  • Package: SOT-23
  • Qualification: AEC-Q101 (Suffix U)

Technical Specifications

Characteristic Symbol Rating Unit Test Condition Min. Typ. Max.
Forward Voltage VF(1) V IF=1mA - 0.60 -
Forward Voltage VF(2) V IF=10mA - 0.72 -
Forward Voltage VF(3) V IF=100mA - 0.90 1.20
Reverse Current IR A VR=80V - - 0.5
Total Capacitance CT pF VR=0, f=1MHz - 0.9 3.0
Reverse Recovery Time trr nS IF=10mA - 1.6 4.0
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 * mA
Average Forward Current IO 100 * mA
Surge Current (10ms) IFSM 2 * A
Power Dissipation PD 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Note: *Unit Rating. Total Rating=Unit Rating x 1.5

Dimensions (SOT-23):

DIM MILLIMETERS MIN MAX
A 2.93
B 0.20
C 1.30+0.20/-0.15
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
M 0.20
N 1.00+0.20/-0.10
P 1.30

2410121737_KEC-KDS184-RTK-HU_C22379551.pdf

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