N Channel Fast Switching Power MOSFET 160A 40V KIA Semicon Tech KCY2704B with Low Gate Charge and RDS
Key Attributes
Model Number:
KCY2704B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
60pF
Output Capacitance(Coss):
1.57nF
Input Capacitance(Ciss):
3.25nF
Pd - Power Dissipation:
111W
Gate Charge(Qg):
63nC@10V
Mfr. Part #:
KCY2704B
Package:
DFN-8(5x6)
Product Description
Product Overview
160A, 40V N-Channel Fast-Switching Power MOSFET. Features advanced SGT technology, low RDS(ON) of 1.5m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, suitable for applications requiring fast switching and high power handling. Available in DFN5*6 package.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCY2704B
- Package: DFN5*6
- Technology: Advanced SGT
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=40V,VGS=0V, TC=25C | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 1.5 | 1.8 | m |
| VGS=4.5V, ID=20A | - | 2.0 | 2.6 | m | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1.0MHz | - | 2.0 | - | |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1.0MHz | - | 3250 | - | pF |
| Output Capacitance | Coss | - | 1570 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 60 | - | pF | |
| Switching Characteristics | Td(on) | VDS=20V,VGS=10V, RG=2.0,ID=30A | - | 17 | - | ns |
| Tr | - | 9 | - | ns | ||
| Td(off) | - | 58 | - | ns | ||
| Tf | - | 30 | - | ns | ||
| Total Gate Charge | Qg | VDS=20V, VGS=10V , ID=30A | - | 63 | - | nC |
| Gate-Source Charge | Qgs | - | 8.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Source-Drain Current (Body Diode) | ISD | - | - | 160 | A | |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 53 | - | nS |
| Reverse Recovery Charge | Qrr | - | 70 | - | nC | |
| Continuous Drain Current | ID | TC=25C | - | - | 160 | A |
| TC=100C | - | - | 110 | A | ||
| Pulsed Drain Current | IDM | @ Current-Pulsed | - | - | 640 | A |
| Total Power Dissipation | PD | (TC=25C) | - | - | 111.1 | W |
| Avalanche Energy | EAS | - | 441 | - | mJ | |
| Thermal Resistance, Junction-to-Case | RJC | - | 1.35 | - | C/W | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | C |
2507111630_KIA-Semicon-Tech-KCY2704B_C49328619.pdf
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