High Current P Channel MOSFET KEXIN 2KJ7103DFN with 24 Milliohm On Resistance and Compact SMD Package
Key Attributes
Model Number:
2KJ7103DFN
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.45nF@25V
Pd - Power Dissipation:
2.9W
Gate Charge(Qg):
-
Mfr. Part #:
2KJ7103DFN
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The 2KJ7103DFN is a P-Channel MOSFET in an SMD Type package, designed for various electronic applications. It features a drain-source voltage of -30V and a continuous drain current of -6A. With a low on-resistance of 24m at VGS=-10V (Typ.), it offers efficient power handling. The PDFN3.3x3.3-8 package ensures compact integration into circuit designs.
Product Attributes
- Brand: Kexin
- Origin: China (inferred from www.kexin.com.cn)
- Package Type: PDFN3.3x3.3-8
Technical Specifications
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-source voltage | -30 | V | |||
| VGS | Gate-source voltage | 20 | V | |||
| ID (1) | Drain current (continuous) at TC = 25 C | -6 | A | |||
| ID (1) | Drain current (continuous) at TC = 100 C | -3.8 | A | |||
| IDM (1)(2) | Drain current (pulsed) | -24 | A | |||
| PTOT | Total dissipation at TC = 25 C | 2.9 | W | |||
| Tstg | Storage temperature | -55 | 150 | C | ||
| Tj Max. | Max. operating junction temperature | 150 | C | |||
| Rthj-case | Thermal resistance junction-case max | 2.50 | C/W | |||
| Rthj-pcb (3) | Thermal resistance junction-pcb, single operation | When mounted on FR-4 board of 1inch, 2oz Cu, t<10 sec. | 42.8 | C/W | ||
| V(BR)DSS | Drain-source breakdown voltage | VGS = 0, ID = -250 A | -30 | V | ||
| IDSS | Zero gate voltage drain current | VGS = 0, VDS = -30 V | -1 | A | ||
| IDSS | Zero gate voltage drain current | VGS = 0, VDS = -30 V, TC = 125 C | -10 | A | ||
| IGSS | Gate-body leakage current | VDS = 0, VGS = 20 V | 100 | nA | ||
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = -250 A | -1 | V | ||
| RDS(on) | Static drain-source on-resistance | VGS = -10 V, ID = -3 A | 0.024 | 0.03 | ||
| RDS(on) | Static drain-source on-resistance | VGS = -4.5 V, ID = 3 A | 0.038 | 0.05 | ||
| Ciss | Input capacitance | VDS = -25 V, f = 1 MHz, VGS = 0 | 1450 | pF | ||
| Coss | Output capacitance | VDS = -25 V, f = 1 MHz, VGS = 0 | 178 | pF | ||
| Crss | Reverse transfer capacitance | VDS = -25 V, f = 1 MHz, VGS = 0 | 120 | pF | ||
| Qg | Total gate charge | VDD = -24 V, ID = -6 A, VGS = -4.5 V | 12 | nC | ||
| Qgs | Gate-source charge | VDD = -24 V, ID = -6 A, VGS = -4.5 V | 4.4 | nC | ||
| Qgd | Gate-drain charge | VDD = -24 V, ID = -6 A, VGS = -4.5 V | 5 | nC | ||
| td(on) | Turn-on delay time | VDD = -24 V, ID = -3 A, RG = 4.7 , VGS = -10 V | 15 | ns | ||
| tr | Rise time | VDD = -24 V, ID = -3 A, RG = 4.7 , VGS = -10 V | 15 | ns | ||
| td(off) | Turn-off delay time | VDD = -24 V, ID = -3 A, RG = 4.7 , VGS = -10 V | 24 | ns | ||
| tf | Fall time | VDD = -24 V, ID = -3 A, RG = 4.7 , VGS = -10 V | 21 | ns | ||
| VSD | Forward on voltage | ISD = -6 A, VGS = 0 | -1.1 | V | ||
| trr | Reverse recovery time | ISD = -6 A, di/dt = -100 A/s, VDD = -16 V, Tj = 150 C | 15 | ns | ||
| Qrr | Reverse recovery charge | ISD = -6 A, di/dt = -100 A/s, VDD = -16 V, Tj = 150 C | 6.5 | nC | ||
| IRRM | Reverse recovery current | ISD = -6 A, di/dt = -100 A/s, VDD = -16 V, Tj = 150 C | -0.9 | A |
2410121608_KEXIN-2KJ7103DFN_C499625.pdf
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