75A 100V N Channel MOSFET KIA Semicon Tech KIA3510AP Designed for Inverter Systems and Power Switching
Key Attributes
Model Number:
KIA3510AP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
179pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.946nF
Output Capacitance(Coss):
339pF
Pd - Power Dissipation:
166W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KIA3510AP
Package:
TO-220
Product Description
Product Overview
This 75A, 100V N-Channel MOSFET from KIA SEMICONDUCTORS (Model 3510A) is designed for switching applications and power management in inverter systems. It offers low on-resistance, 100% avalanche testing, and a reliable, rugged construction. Lead-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 3510A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-220/263 | TO-252 | Units | Conditions |
| Continuous drain current | ID | 75 | 65 | A | TC=25C |
| 51 | 44 | A | TC=100C | ||
| Pulsed drain current | 219 | - | A | TC=25C | |
| Avalanche current | 30 | - | A | IAS5 | |
| Avalanche energy | 225 | - | mJ | EAS5 | |
| Maximum power dissipation | PD | 166 | - | W | TC=25 C |
| 83 | - | W | TC=100C | ||
| Drain-source on-state resistance | RDS(on) | 9 | 9 | m | VGS=10V,IDS=50A |
| 11 | 14 | m | VGS=10V,IDS=50A | ||
| Gate resistance | - | 1.2 | VDS=0V, VGS=0V,f=1MHz | ||
| Diode forward voltage | - | 1.3 | V | ISD=50A, VGS=0V | |
| Reverse recovery time | - | 46 | nS | ISD=50A , dlSD/dt=100A/s | |
| Reverse recovery charge | - | 86 | nC | - | |
| Capacitance | Ciss | 2946 | - | pF | VDS=25V,VGS=0V, f=1MHz |
| Coss | 339 | - | pF | - | |
| Crss | 179 | - | pF | - | |
| Switching time | td(on) | 15 | - | ns | VDD=50V,IDS=30A, RG=6.8,VGS=10V |
| tr | 108 | - | ns | - | |
| td(off) | 51 | - | ns | - | |
| tf | 59 | - | ns | - | |
| Gate charge | Qg | 60 | - | nC | VDS=50V,VGS=10V IDS=30A |
| Qgs | 13.7 | - | - | - | |
| Qgd | 22.8 | - | - | - | |
| Parameter | Symbol | Rating | Units | Conditions |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V,IDS=250a |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=80V, VGS=0V |
| 20 | A | TJ=125C | ||
| Gate threshold voltage | VGS(th) | 2.0 | V | VDS=VGS, ID=250A |
| 3.0 | V | VDS=VGS, ID=250A | ||
| 4.0 | V | VDS=VGS, ID=250A | ||
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V |
| Gate-source voltage | VGSS | 25 | V | - |
| Maximum junction temperature | TJ | 175 | C | - |
| Storage temperature range | TSTG | -55 to175 | C | - |
2410010000_KIA-Semicon-Tech-KIA3510AP_C176880.pdf
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