Low On Resistance N CHANNEL MOSFET KIA Semicon Tech KIA2803AP with High Junction Operating Temperature
Key Attributes
Model Number:
KIA2803AP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
605pF
Number:
-
Output Capacitance(Coss):
715pF
Input Capacitance(Ciss):
5.35nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
110nC@4.5V
Mfr. Part #:
KIA2803AP
Package:
TO-220-3
Product Description
Product Overview
The KIA2803A is an N-CHANNEL MOSFET designed using trench processing techniques to achieve extremely low on-resistance. It features a high junction operating temperature of 150C, fast switching speeds, and improved repetitive avalanche rating. This makes it an efficient and reliable device for motor applications and a wide variety of other uses.
Product Attributes
- Brand: KIA
- Certifications: Lead-Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Off Characteristics | BVDSS | VGS=0V,ID=250A | 30 | - | - | V |
| IDSS | VDS=24V,VGS=0V | - | - | 1 | A | |
| IDSS | TC=125C | - | - | 100 | A | |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA | |
| On Characteristics | VGS(th) | VDS=VGS,ID=250A | 0.8 | 1.3 | 2.0 | V |
| RDS(on) | VGS=10V,ID=40A | - | 2.2 | 3.0 | m | |
| Dynamic Characteristics | Ciss | VDS=15V,VGS=0V f=1.0MHz | - | 5350 | - | pF |
| Qg | VDS=15V,ID=20A, VGS=4.5V | - | 110 | - | nC | |
| Resistive switching characteristics | Td(ON) | VDD=15V,ID=10A, VGS=4.5V,RG=6.8 | - | 19 | - | nS |
| trise | - | 50 | - | |||
| Td(OFF) | - | 20 | - | |||
| tfall | - | 26 | - | |||
| Source-drain body diode characteristics | VSD | VGS=0V,ISD=20A | - | - | 1.3 | V |
| trr | ISD=30A,diF/dt=100A/s, TJ=25C, VGS=0V | - | 32 | - | ns | |
| Ordering Information | Part Number | Package | Brand | |||
| KIA2803AB | TO-263 | KIA | ||||
| KIA2803AP | TO-220 | KIA |
2508261745_KIA-Semicon-Tech-KIA2803AP_C134934.pdf
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