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quality Power Control N Channel MOSFET KEXIN KI2302DS Featuring Low On State Resistance and Robust Ratings factory
quality Power Control N Channel MOSFET KEXIN KI2302DS Featuring Low On State Resistance and Robust Ratings factory

Power Control N Channel MOSFET KEXIN KI2302DS Featuring Low On State Resistance and Robust Ratings

Key Attributes
Model Number: KI2302DS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
950mV
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
KI2302DS
Package:
SOT-23
Product Description

N-Channel MOSFET

This N-Channel MOSFET is designed for various applications requiring efficient switching and power control. Its key features include low on-state resistance and robust absolute maximum ratings, making it suitable for general-purpose power management.

Product Attributes

  • Brand: Kexin
  • Origin: China (implied by www.kexin.com.cn)
  • SMD Type: SOT-23
  • Marking: A2SHB

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current ID Ta = 25 2.1 A
Continuous Drain Current ID Ta=70 1.7 A
Pulsed Drain Current IDM 10 A
Power Dissipation PD Ta = 25 0.7 W
Power Dissipation PD Ta=70 0.46 W
Thermal Resistance, Junction-to-Ambient RthJA 178 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage VDSS VGS = 0 V, ID = 10 A 20 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 0.62 0.95 1.9 V
Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA
Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55 10 µA
Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA
Drain-Source On-Resistance rDS(on) VGS = 4.5 V, ID = 3.6 A 0.045 0.085 Ω
Drain-Source On-Resistance rDS(on) VGS = 2.5 V, ID = 3.1 A 0.070 0.115 Ω
On-State Drain Current ID(on) VDS ≥ 5 V, VGS = 4.5 V 6 A
On-State Drain Current ID(on) VDS ≥ 5 V, VGS = 2.5 V 4 A
Forward Transconductance gfs VDS = 5 V, ID = 3.6 A 8 S
Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHz 300 pF
Output Capacitance Coss VDS=10V,VGS=4.5V,ID=3.6A 120 pF
Reverse Transfer Capacitance Crss 80 pF
Total Gate Charge Qg 4.0 nC
Gate-Source Charge Qgs 0.65 nC
Gate-Drain Charge Qg 1.5 nC
Turn-On Delay Time td(on) VDD=10V,RL=5.5 Ω,ID 3.6A,VGEN=4.5V,RG=6Ω 7 15 ns
Rise Time tr 55 80 ns
Turn-Off Delay Time td(off) 16 60 ns
Fall-Time tf 10 25 ns
Continuous Source Current (Diode Conduction) IS 0.94 A
Diode Forward Voltage VSD IS = 0.94A, VGS = 0 V 0.76 1.2 V

2410121537_KEXIN-KI2302DS_C489352.pdf

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