Power N Channel MOSFET KEXIN KI2308DS with 60V Drain Source Voltage and Low Gate Body Leakage Current
Key Attributes
Model Number:
KI2308DS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-40℃~+150℃
RDS(on):
160mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
240pF@25V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
KI2308DS
Package:
SOT-23
Product Description
Product Overview
The SI2308DS (KI2308DS) is an N-Channel MOSFET designed for various electronic applications. It offers a high drain-source voltage of 60V and a continuous drain current of up to 2A. With low on-resistance values (RDS(ON) < 160m at VGS=10V), it provides efficient power handling. This MOSFET is suitable for applications requiring fast switching and low power loss.
Product Attributes
- SMD Type: SOT-23-3
- Brand: Kexin
- Website: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 60 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.5 | 3 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=2A | 160 | m | ||
| VGS=4.5V, ID=1.7A | 220 | m | ||||
| Forward Transconductance | gFS | VDS=4.5V, ID=2A | 4.6 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1MHz | 240 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1MHz | 50 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1MHz | 15 | pF | ||
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 0.5 | 3.3 | ||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=2A | 4.8 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=30V, ID=2A | 0.8 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=30V, ID=2A | 1 | nC | ||
| Turn-On Delay Time | td(on) | VGS=4.5V, VDS=30V, ID=1A, RL=30,RG=6 | 7 | 15 | ns | |
| Turn-On Rise Time | tr | VGS=4.5V, VDS=30V, ID=1A, RL=30,RG=6 | 10 | 20 | ns | |
| Turn-Off Delay Time | td(off) | VGS=4.5V, VDS=30V, ID=1A, RL=30,RG=6 | 17 | 35 | ns | |
| Turn-Off Fall Time | tf | VGS=4.5V, VDS=30V, ID=1A, RL=30,RG=6 | 6 | 15 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1 | A | |||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | 1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 0.5 | A | ||
| Zero Gate Voltage Drain Current (at 55) | IDSS | VDS=60V, VGS=0V, TJ=55 | 10 | A | ||
| Continuous Drain Current | ID | Ta=25 | 2 | A | ||
| Continuous Drain Current | ID | Ta=70 | 1.6 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 10 | A | ||
| Power Dissipation | PD | Ta=25 | 1.25 | W | ||
| Power Dissipation | PD | Ta=70 | 0.8 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on FR4 Board, t 5 sec. | 100 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on FR4 Board | 166 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2410121715_KEXIN-KI2308DS_C489366.pdf
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