40V MOSFET KIA Semicon Tech KNP2804C 150A N channel transistor optimized for motor control and power
Key Attributes
Model Number:
KNP2804C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-
RDS(on):
4mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
640pF
Number:
-
Output Capacitance(Coss):
690pF
Input Capacitance(Ciss):
5.9nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
KNP2804C
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX2804C is a 150A, 40V N-CHANNEL MOSFET featuring CRM(CQ) advanced Trench MOS technology. It offers an extremely low on-resistance (RDS(ON), typ.=3.0m@VGS=10V) and an excellent Gate Charge x RDS(on) product (FOM). This MOSFET is ideal for applications such as motor control and drive, battery management, and UPS systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX2804C
- Package: TO-220
- Origin: KIA
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 C unless otherwise specified) | ||||||
| Drain-to-Source Voltage | VDSS | 40 | V | |||
| Gate-to-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 C(Silicon limited) | 150 | A | ||
| TC=100 C(Silicon limited) | 90 | A | ||||
| TC=25 C(Package limited) | 80 | A | ||||
| Pulsed Drain Current | IDM | TC=25 C(tp limited by Tjmax) | 320 | A | ||
| Avalanche Energy | EAS | L=0.5mH,RG=25 | 225 | mJ | ||
| Maximum Power Dissipation | PD | TC=25 C | 230 | W | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-case | RJC | 0.54 | C/W | |||
| Thermal resistance, junction-ambient | RJA | 105 | C/W | |||
| Electrical Characteristics (TJ=25C, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=36V , VGS=0V | 1 | A | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 2.0 | 3.0 | V |
| Gate leakage current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=30A | 3.0 | 4.0 | m | |
| Forward Transconductance | gfs | VDS=5V,ID=40A | 126 | S | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1MHz | 1.5 | |||
| Input capacitance | Ciss | VDS=20V,VGS=0V, F=1MHz | 5900 | pF | ||
| Output capacitance | Coss | 690 | pF | |||
| Reverse transfer capacitance | Crss | 640 | pF | |||
| Turn-on delay time | td(on) | VDS=20V,ID=40A, VGS=10V,RG=3 | 28 | ns | ||
| Rise time | tr | 68 | ns | |||
| Turn-off delay time | td(off) | 110 | ns | |||
| Fall time | tf | 32 | ns | |||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDS=32V,ID=40A , VGS=10V | 120 | nC | ||
| Gate-source charge | Qgs | 18 | nC | |||
| Gate-drain charge | Qg d | 34 | nC | |||
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V,ISD=30A | 0.85 | 1.3 | V | |
| Drain Continuous Forward current | IS | 150 | A | |||
| Reverse recovery time | trr | IF=40A di/dt=100A/s | 40 | ns | ||
| Reverse recovery charge | Qrr | 41 | nC | |||
2410010000_KIA-Semicon-Tech-KNP2804C_C1509095.pdf
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