N Channel Enhancement Mode MOSFET KEXIN AO3402 SMD Type with 30V Drain Source Voltage and 4A Current

Key Attributes
Model Number: AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
54.5pF
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.34nC@4.5V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description

Product Overview

The KO3402 (AO3402) is an N-Channel Enhancement Mode Field Effect Transistor designed for SMD applications. It offers a VDS of 30V and a continuous drain current (ID) of 4A, with low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power switching.

Product Attributes

  • Brand: Kexin
  • Type: SMD Type MOSFET
  • Model: KO3402 (AO3402)
  • Origin: China (implied by www.kexin.com.cn)
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageVDSSID=250 µA, VGS=0V30V
VDS=24V, VGS=0V1V
Gate-Body leakage currentIGSSVDS=0V, VGS=±12V100nA
Gate Threshold VoltageVGS(th)VDS=VGS, ID=250 µA0.611.4V
On state drain currentID(ON)VGS=10V, ID=4A4555
VGS=10V, ID=4A, TJ=125°C6680
VGS=4.5V, ID=3A5570
On state drain currentID(ON)VGS=2.5V, ID=2A83110
Forward TransconductancegFSVDS=5V, ID=4A8S
Input CapacitanceCissVGS=0V, VDS=15V, f=1MHz390pF
Output CapacitanceCossVGS=0V, VDS=15V, f=1MHz54.5pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=15V, f=1MHz41pF
Gate resistanceRgVGS=0V, VDS=0V, f=1MHz3Ω
Total Gate ChargeQgVGS=10V, VDS=15V, ID=4A4.34nC
Gate Source ChargeQgsVGS=10V, VDS=15V, ID=4A0.6nC
Gate Drain Charge QgdVGS=10V, VDS=15V, ID=4A1.38nC
Turn-On DelayTimetD(on)VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω3.3ns
Turn-On Rise TimetrVGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω1ns
Turn-Off DelayTimetD(off)VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω21.7ns
Turn-Off Fall TimetfVGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω2.1ns
Body Diode Reverse Recovery TimetrrIF=4A, dI/dt=100A/µs12ns
Body Diode Reverse Recovery ChargeQrrIF=4A, dI/dt=100A/µs6.3nC
Maximum Body-Diode Continuous CurrentIS2.5A
Diode Forward VoltageVSDIS=1A, VGS=0V0.81V
Static Drain-Source On-ResistanceRDS(ON)VGS=10V, ID=4A55
Static Drain-Source On-ResistanceRDS(ON)VGS=4.5V, ID=3A5570
Static Drain-Source On-ResistanceRDS(ON)VGS=2.5V, ID=2A83110
Zero Gate Voltage Drain CurrentIDSSVGS=0V, VDS=15V1µA

2409302301_KEXIN-AO3402_C382313.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.