N Channel Enhancement Mode MOSFET KEXIN AO3402 SMD Type with 30V Drain Source Voltage and 4A Current
Product Overview
The KO3402 (AO3402) is an N-Channel Enhancement Mode Field Effect Transistor designed for SMD applications. It offers a VDS of 30V and a continuous drain current (ID) of 4A, with low on-resistance (RDS(ON)) at various gate-source voltages, making it suitable for efficient power switching.
Product Attributes
- Brand: Kexin
- Type: SMD Type MOSFET
- Model: KO3402 (AO3402)
- Origin: China (implied by www.kexin.com.cn)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250 µA, VGS=0V | 30 | V | ||
| VDS=24V, VGS=0V | 1 | V | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 µA | 0.6 | 1 | 1.4 | V |
| On state drain current | ID(ON) | VGS=10V, ID=4A | 45 | 55 | mΩ | |
| VGS=10V, ID=4A, TJ=125°C | 66 | 80 | mΩ | |||
| VGS=4.5V, ID=3A | 55 | 70 | mΩ | |||
| On state drain current | ID(ON) | VGS=2.5V, ID=2A | 83 | 110 | mΩ | |
| Forward Transconductance | gFS | VDS=5V, ID=4A | 8 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 390 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 54.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 41 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 3 | Ω | ||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, ID=4A | 4.34 | nC | ||
| Gate Source Charge | Qgs | VGS=10V, VDS=15V, ID=4A | 0.6 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=15V, ID=4A | 1.38 | nC | ||
| Turn-On DelayTime | tD(on) | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 3.3 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 1 | ns | ||
| Turn-Off DelayTime | tD(off) | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 21.7 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω | 2.1 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=4A, dI/dt=100A/µs | 12 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=4A, dI/dt=100A/µs | 6.3 | nC | ||
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | |||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.8 | 1 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=4A | 55 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | 55 | 70 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=2A | 83 | 110 | mΩ | |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=15V | 1 | µA |
2409302301_KEXIN-AO3402_C382313.pdf
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