Power MOSFET KEXIN FDC2512 HF N Channel Enhancement type with 1.4A continuous drain current rating
Key Attributes
Model Number:
FDC2512-HF
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
425mΩ@10V,1.4A
Gate Threshold Voltage (Vgs(th)):
2.6V
Reverse Transfer Capacitance (Crss@Vds):
9pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
344pF@75V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
FDC2512-HF
Package:
SOT-23-6
Product Description
Product Overview
The FDC2512-HF is an N-Channel Enhancement MOSFET designed for various electronic applications. It features a high breakdown voltage of 150V and a continuous drain current of 1.4A. With low on-state resistance and excellent thermal characteristics, this MOSFET is suitable for power management and switching applications.
Product Attributes
- Brand: Kexin
- Origin: China (www.kexin.com.cn)
- Type: SMD
- SMD Type: SOT-23-6
- Marking: FDC2512, FDC2512-HF
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Features | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Continuous Drain Current | ID | (VGS = 10V) | 1.4 | A | ||
| On-State Resistance | RDS(ON) | (VGS = 10V) | 425 | m | ||
| On-State Resistance | RDS(ON) | (VGS = 6V) | 475 | m | ||
| Absolute Maximum Ratings | ||||||
| Parameter | Symbol | Rating | Unit | |||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current - Continuous *1a | ID | 1.4 | A | |||
| Drain Current - Pulsed *1a | ID | 8 | A | |||
| Power Dissipation *1a | PD | 1.6 | W | |||
| Power Dissipation *1b | PD | 0.8 | W | |||
| Thermal Resistance.Junction- to-Ambient *1a | RthJA | 78 | C/W | |||
| Thermal Resistance.Junction- to-Case *1 | RthJC | 30 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 to 150 | C | |||
| Electrical Characteristics | ||||||
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=120V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSSF | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage *1 | VGS(th) | VDS=VGS , ID=250A | 2 | 2.6 | 4 | V |
| Static Drain-Source On-Resistance *1 | RDS(On) | VGS=10V, ID=1.4A | 319 | 425 | m | |
| Static Drain-Source On-Resistance *1 | RDS(On) | VGS=6.0V, ID=1.3A | 332 | 475 | m | |
| On State Drain Current *1 | ID(ON) | VGS=10V, VDS=5V | 4 | A | ||
| Forward Transconductance *1 | gFS | VDS=10V, ID=1.4A | 4 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=75V, f=1MHz | 344 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=75V, f=1MHz | pF | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=75V, f=1MHz | pF | |||
| Total Gate Charge | Qg | VGS=10V, ID=1.4A | 8 | 11 | nC | |
| Gate Source Charge | Qgs | VGS=10V, ID=1.4A | 1.5 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, ID=1.4A | 2.3 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, ID=1.4A, RGEN=6 | 6.5 | 13 | ns | |
| Turn-On Rise Time | tr | VGS=10V, ID=1.4A, RGEN=6 | 3.5 | 7 | ns | |
| Turn-Off Delay Time | td(off) | VGS=10V, ID=1.4A, RGEN=6 | 22 | 33 | ns | |
| Turn-Off Fall Time | tf | VGS=10V, ID=1.4A, RGEN=6 | 4 | 8 | ns | |
| Body Diode Reverse Recovery Time | trr | IF= 1.4A, dI/dt= 300A/s | 45.8 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 1.4A, dI/dt= 300A/s | 119 | nC | ||
| Maximum Body-Diode Continuous Current | IS | 1.3 | A | |||
| Diode Forward Voltage | VSD | IS=1.3A,VGS=0V | 0.8 | 1.2 | V | |
2409302230_KEXIN-FDC2512-HF_C489382.pdf
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