Silicon Power IGBT KIA Semicon Tech KGM40N120AI 40A 1200V TO247 Package Suitable for Industrial Applications
Key Attributes
Model Number:
KGM40N120AI
Product Custom Attributes
Mfr. Part #:
KGM40N120AI
Package:
TO-247
Product Description
Product Overview
This is a 40A, 1200V Silicon Power IGBT from KIA SEMICONDUCTORS. It features low VCE(sat) of 1.91V (typ.), fast switching, high ruggedness, and short-circuit rating. Ideal for applications such as Solar Inverters, Uninterrupted Power Supply, Industrial Inductive Heating, and Energy Storage.
Product Attributes
- Brand: KIA
- Material: Silicon Power IGBT
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Ordering Information | |||
| Part Number | KGM40N120AI | ||
| Package | TO-247 | ||
| Brand | KIA | ||
| Maximum Ratings | |||
| Collector-emitter voltage | VCE | 1200 | V |
| DC collector current, TC=25C | IC | 80 | A |
| DC collector current, TC=100C | IC | 40 | A |
| Pulsed collector current | ICpuls | 160 | A |
| Diode forward current, TC=25C | IF | 40 | A |
| Diode forward current, TC=100C | IF | 40 | A |
| Diode pulsed current | IFpuls | 80 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Transient Gate-emitter voltage | VGE | ±30 | V |
| Power dissipation, TC=25C | Ptot | 575 | W |
| Power dissipation, TC=100C | Ptot | 290 | W |
| Operating junction temperature | Tvj(0P) | -40 to +175 | C |
| Storage temperature | Tstg | -40 to +150 | C |
| Soldering temperature | 260 | C | |
| Thermal characteristics | |||
| IGBT Thermal Resistance, Junction-Case | R(J-C) | 0.26 | C/W |
| Diode Thermal Resistance, Junction-Case | R(J-C) | 0.45 | C/W |
| Electrical characteristics (TVj=25C, unless otherwise specified) | |||
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V |
| Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=25C | VCEsat | 1.91 | V |
| Collector-emitter saturation voltage, VGE=15V, IC=60A, Tvj=150C | VCEsat | 2.36 | V |
| Diode forward voltage, IF=60A, Tvj=25C | VF | 2.0 | V |
| Diode forward voltage, IF=60A, Tvj=150C | VF | 1.74 | V |
| Gate-emitter threshold voltage | VGE(th) | 5.1 | V |
| Zero gate voltage collector current, VCE=650V, Tvj=25C | ICES | 250 | uA |
| Gate-emitter leakage current, VGE=±20V | IGES | 600 | nA |
| Transconductance, VCE=20V, IC=60A | gfs | 27 | S |
| Dynamic Characteristic (TVj=25C, unless otherwise specified) | |||
| Input capacitance | Cies | 2500 | pF |
| Output capacitance | Coes | 200 | pF |
| Reverse transfer capacitance | Cres | 100 | pF |
| Gate charge | QG | 120 | nC |
| IGBT Characteristic, at Tvj=25C | |||
| Turn-on delay time | td(on) | 15 | nS |
| Rise time | tr | 70 | nS |
| Turn-off delay time | td(off) | 145 | nS |
| Fall time | tf | 82 | nS |
| Turn-on energy | Eon | 3.48 | mJ |
| Turn-off energy | Eoff | 1.47 | mJ |
| Diode Characteristic | |||
| Diode reverse recovery time | trr | 450 | nS |
| Diode reverse recovery charge | Qrr | 2.57 | μC |
| Diode peak reverse recovery current | Irrm | 13 | A |
2411121110_KIA-Semicon-Tech-KGM40N120AI_C41369542.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
