Low On Resistance Power MOSFET KEXIN KO3402 N Channel Enhancement SMD Type IC for Power Applications
Key Attributes
Model Number:
KO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
390pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.34nC
Mfr. Part #:
KO3402
Package:
SOT-23-3
Product Description
Product Overview
The AO3402 (KO3402) is an N-Channel Enhancement MOSFET designed for SMD applications. It features a low on-resistance and is suitable for various power management tasks.
Product Attributes
- Brand: Kexin
- Origin: China
- Type: SMD Type IC, SMD Type MOSFET
- Model: AO3402 (KO3402)
- Marking: A2*
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250 µA, VGS=0V | 30 | V | ||
| VDS=24V, VGS=0V | 5 | µA | ||||
| VDS=24V, VGS=0V,TJ=55°C | 5 | µA | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= ±12V | 100 | nA | ||
| Gate-Body Threshold Voltage | VGS(th) | VDS=VGS, ID=250 µA | 0.6 | 1 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=4A | 55 | mΩ | ||
| VGS=4.5V, ID=4A | 70 | mΩ | ||||
| VGS=2.5V, ID=2A | 110 | mΩ | ||||
| VGS=10V, ID=4A, TJ=125°C | 66 | 80 | mΩ | |||
| VGS=4.5V, ID=3A | 75 | 85 | mΩ | |||
| VGS=2.5V, ID=1A | 110 | 130 | mΩ | |||
| Drain Current | ID | VGS=10V, VDS=5V | 5 | A | ||
| VGS=4.5V, VDS=5V | 4 | A | ||||
| Continuous Drain Current | ID | TA=25°C | 4 | A | ||
| TA=70°C | 3.4 | A | ||||
| Pulsed Drain Current | IDM | 15 | A | |||
| Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| TA=70°C | 1 | W | ||||
| Thermal Resistance.Junction-to-Ambient | RθJA | 125 | °C/W | |||
| Thermal Resistance.Junction-to-Case | RθJC | 80 | °C/W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Drain-Source Breakdown Voltage | VDSS | ID=250 µA, VGS=0V | 30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±12V | 100 | nA | ||
| Gate-Body Threshold Voltage | VGS(th) | VDS=VGS, ID=250 µA | 0.6 | 1 | 1.4 | V |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=15V | 1 | 10 | µA | |
| VGS=0V, VDS=15V,TJ=55°C | 50 | µA | ||||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 390 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 54.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 41 | pF | ||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, ID=4A | 4.34 | nC | ||
| Gate Charge Source | Qg s | VGS=10V, VDS=15V, ID=4A | 0.6 | nC | ||
| Gate Charge Drain | Qg d | VGS=10V, VDS=15V, ID=4A | 1.38 | nC | ||
| Turn-On Delay Time | tD(on) | VGS=10V, VDS=15V, RL=3.75 Ω,RGEN=6 Ω | 3.3 | ns | ||
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, RL=3.75 Ω,RGEN=6 Ω | 1 | ns | ||
| Turn-Off Delay Time | tD(off) | VGS=10V, VDS=15V, RL=3.75 Ω,RGEN=6 Ω | 21.7 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=3.75 Ω,RGEN=6 Ω | 2.1 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=4A, dI/dt=100A/µs | 12 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=4A, dI/dt=100A/µs | 6.3 | nC | ||
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | |||
| Forward Voltage | VSD | IS=1A,VGS=0V | 0.8 | 1.2 | V |
2409302301_KEXIN-KO3402_C489373.pdf
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