Low On Resistance P Channel MOSFET KEXIN KI2301DS Designed for Electronic Surface Mount Applications
Key Attributes
Model Number:
KI2301DS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 P-Channel
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
KI2301DS
Package:
SOT-23
Product Description
Product Overview
The SI2301DS (KI2301DS) is a P-Channel Enhancement MOSFET designed for various electronic applications. It features a low on-resistance and is suitable for surface mounting on FR4 boards.
Product Attributes
- SMD Type
- Brand: Kexin (www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | Notes | |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||||
| VDS=-20V, VGS=0V | -1 | V | ||||||
| VDS=-20V, VGS=0V, TJ=55C | -10 | V | ||||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.45 | -1 | V | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-2.8A | 105 | 130 | m | *1 | ||
| VGS=-2.5V, ID=-2.0A | 145 | 190 | m | *1 | ||||
| Continuous Drain Current | ID | Ta=25C | -2.3 | A | *1 | |||
| Continuous Drain Current | ID | Ta=70C | -1.5 | A | *1 | |||
| Pulsed Drain Current | IDM | -10 | A | *2 | ||||
| Power Dissipation | PD | Ta=25C | 1.25 | W | *1 | |||
| Power Dissipation | PD | Ta=70C | 0.8 | W | *1 | |||
| Thermal Resistance.Junction- to-Ambient | RthJA | Ta=25C | 100 | C/W | *1 | |||
| Thermal Resistance.Junction- to-Ambient | RthJA | Ta=70C | 166 | C/W | *3 | |||
| Junction Temperature | TJ | 150 | C | |||||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||||
| Source-Drain Diode Forward Voltage | VSD | IS=-1.6A,VGS=0V | -0.8 | -1.2 | V | *1 | ||
| Continuous Source Current (Diode Conduction) | Is | -1.6 | A | |||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V, TJ=55C | -10 | A | ||||
| Forward Transconductance | gFS | VDS=-5V, ID=-2.8A | 6.5 | S | *1 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-6V, f=1MHz | 415 | pF | *2 | |||
| Output Capacitance | Coss | VGS=0V, VDS=-6V, f=1MHz | 223 | pF | *2 | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-6V, f=1MHz | 87 | pF | *2 | |||
| Total Gate Charge | Qg | VGS=-4.5V, VDS -5V, ID=-2.8A | 5.8 | nC | *1 | |||
| Gate Source Charge | Qgs | VGS=-4.5V, VDS -5V, ID=-2.8A | 0.85 | nC | *1 | |||
| Gate Drain Charge | Qgd | VGS=-4.5V, VDS -5V, ID=-2.8A | 1.7 | nC | *1 | |||
| Turn-On DelayTime | td(on) | VGEN=-4.5V, VDS=-6V, RL=6,RG=6 | 13 | ns | *3 | |||
| Turn-On Rise Time | tr | VGEN=-4.5V, VDS=-6V, RL=6,RG=6 | 36 | ns | *3 | |||
| Turn-Off DelayTime | td(off) | ID=1.0A | 42 | ns | *3 | |||
| Turn-Off Fall Time | tf | ID=1.0A | 34 | ns | *3 | |||
2410122028_KEXIN-KI2301DS_C489351.pdf
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