1200V Silicon Carbide MOSFET KNSCHA KN3M80120K Featuring Low Reverse Recovery Qrr and RoHS Compliance
Key Attributes
Model Number:
KN3M80120K
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
38A
Operating Temperature -:
-55℃~+175℃
RDS(on):
85mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.9pF
Input Capacitance(Ciss):
920pF
Pd - Power Dissipation:
214W
Output Capacitance(Coss):
57pF
Gate Charge(Qg):
40nC
Mfr. Part #:
KN3M80120K
Package:
TO-247-4
Product Description
Product Overview
This 1200V Silicon Carbide Power MOSFET (TO-247-4L package) offers high-speed switching with very low switching losses, making it suitable for demanding power applications. It features IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The fast intrinsic diode with low reverse recovery (Qrr) contributes to improved efficiency and reduced cooling requirements. It is halogen-free and RoHS compliant.
Product Attributes
- Brand: KNSCHA
- Package: TO-247-4L
- Material: Silicon Carbide
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Type | VDS (V) | IDS (TC=25, A) | RDS(ON), typ (m) | Tj,max () | Package | Marking |
| KN3M80120D | 1200 | 38 | 80 (VGS = 18 V, ID = 20 A, TJ=25) | 175 | TO247-4L | KN3M80120D |
| KN3M80120K | 1200 | 38 | 80 (VGS = 18 V, ID = 20 A, TJ=25) | 175 | TO247-4L | KN3M80120K |
| Symbol | Parameter | Value | Unit | Test Conditions |
| VDS,max | Drain source voltage | 1200 | V | VGS = 0 V, ID = 100 A |
| VGS,max | Gate source voltage | -8 /+22 | V | Absolute maximum values |
| VGSop | Gate source voltage | -4 /+18 | V | Recommended operational values |
| ID | Continuous drain current | 38 | A | VGS = 18 V, TC = 25C |
| ID | Continuous drain current | 27 | A | VGS = 18 V, TC = 100C |
| ID(pluse) | Pulsed drain current | 80 | A | Pulse width tP limited by Tj,max |
| PD | Power dissipation | 214 | W | TC=25C,TJ =175C |
| TJ ,Tstg | Operating Junction and storage temperature | -55 to +175 | C | |
| TL | Soldering temperature | 260 | C | 1.6mm (0.063) from case for 10s |
| Rth(j-c) | Thermal resistance from junction to case | 0.7 | C/W | |
| Rth(j-a) | Thermal resistance from junction to ambient | 35 | C/W | Not subject to production test. Parameter verified by design/characterization. |
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0V, ID = 100A |
| VGS(th) | Gate threshold voltage | 2.3 - 3.6 | V | VDS = VGS, ID = 5mA |
| VGS(th) | Gate threshold voltage | 2.1 | V | VDS = VGS, ID = 5mA, TJ=175C |
| IDSS | Zero gate voltage drain current | 1 | A | VDS = 1200V, VGS = 0V |
| IGSS | Gate source leakage current | 100 | nA | VGS = 18V, VDS = 0V |
| RDS(on) | Current drain-source on-state resistance | 70 - 85 | m | VGS = 18V, ID = 20A |
| RDS(on) | Current drain-source on-state resistance | 125 | m | VGS = 18V, ID = 20A, TJ=175C |
| gfs | Transconductance | 10 | S | VDS = 20V, ID = 20A |
| gfs | Transconductance | 9.2 | S | VDS = 20V, ID = 20A, TJ=175C |
| Rg,int | Internal gate resistance | 1.5 | VAC = 25mV, f=1MHz | |
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 10A |
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A TJ = 175C |
| Ciss | Input capacitance | 920 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f=1MHz |
| Coss | Output capacitance | 57 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f=1MHz |
| Crss | Reverse capacitance | 3.9 | pF | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f=1MHz |
| Eoss | Coss stored energy | 35 | J | VDS = 1000V, VGS = 0V TJ = 25C, VAC = 25mV f=1MHz |
| Qgs | Gate source charge | 7 | nC | VDS = 800V, VGS = -4/18V ID = 20A |
| Qgd | Gate drain charge | 19 | nC | VDS = 800V, VGS = -4/18V ID = 20A |
| Qg | Gate charge | 40 | nC | VDS = 800V, VGS = -4/18V ID = 20A |
| Eon | Turn on switching energy | 320 | J | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| Eoff | Turn off switching energy | 49 | J | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| tdon | Turn on delay time | 19 | ns | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| tr | Rise time | 21 | ns | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| tdoff | Turn off delay time | 15 | ns | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| tf | Fall time | 17 | ns | VDD = 800V, VGS = -4/+15V ID = 20A, Rg = 0 L = 120uH |
| VSD | Diode forward voltage | 4.3 | V | VGS = -4V, ISD = 10A |
| VSD | Diode forward voltage | 3.8 | V | VGS = -4V, ISD = 10A TJ = 175C |
| IS | Continuous diode forward current | 38 | A | Tc = 25C |
| trr | Reverse recovery time | 41 | nS | VR = 800V, VGS = -4V ID = 20A di/dt = 700A/S TJ = 150C |
| Qrr | Reverse recovery charge | 405 | nC | VR = 800V, VGS = -4V ID = 20A di/dt = 700A/S TJ = 150C |
| Irrm | Peak reverse recovery current | 20 | A | VR = 800V, VGS = -4V ID = 20A di/dt = 700A/S TJ = 150C |
2410122008_KNSCHA-KN3M80120K_C5373190.pdf
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