N Channel MOSFET 50A 30V KIA Semicon Tech KIA50N03BD Featuring Low Crss and Improved dvdt Capability
Key Attributes
Model Number:
KIA50N03BD
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
KIA50N03BD
Package:
TO-252
Product Description
Product Overview
The KIA50N03B is a 50A, 30V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, engineered with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers fully characterized avalanche voltage and current, low gate charge, low Crss, fast switching, and improved dv/dt capability, making it suitable for various power electronic applications.
Product Attributes
- Brand: KIA
- Part Number: KIA50N03B
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| ID | Drain Current -Continuous (TC = 25 C) | 50 | A | |||
| ID | Drain Current -Continuous (TC = 100 C) | 30 | A | |||
| IDM | Drain Current -Pulsed | 200 | A | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note 1) | 85 | mJ | |||
| PD | Power Dissipation (TC = 25 C) | 60 | W | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | 1.8 | C /W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 uA | 30 | -- | -- | V |
| IDSS | Drain-Source Leakage Current | VDS = 30 V, VGS = 0 V | -- | -- | 1 | uA |
| IGSS | Gate- Source Leakage Current | VGS = 20 V, VDS = 0 V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 uA | 1.0 | 1.6 | 3.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 15 A | -- | 6.5 | 9.9 | m |
| RG | Gate Resistance | f = 1.0 MHz | -- | 5.0 | -- | |
| Ciss | Input Capacitance | VDS = 30 V, VGS = 0 V, f = 1.0 MHz | -- | 1200 | -- | pF |
| Coss | Output Capacitance | -- | 150 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 115 | -- | pF | |
| td(on) | Turn-On Delay Time | VDD = 20 V,VGS=10V, ID = 15 A, RG = 6 (Note2.3) | -- | 4.6 | -- | ns |
| tr | Turn-On Rise Time | -- | 35 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 40 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 16 | -- | ns | |
| Qg | Total Gate Charge | VDD = 24 V, ID = 15A, VGS = 10 V (Note 2,3) | -- | 25 | -- | nC |
| Qgs | Gate-Source Charge | -- | 5.0 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 5.5 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 50 | A |
| ISM | Pulsed Source Current | -- | -- | 200 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS =15 A | -- | -- | 1.5 | V |
| trr | Reverse Recovery Time | VGS = 0 V, IS = 15 A, dIF / dt = 100 A/us (Note 2) | -- | 12.5 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 0.005 | -- | uC | |
2409302331_KIA-Semicon-Tech-KIA50N03BD_C455976.pdf
Related Products
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
