High Speed Switching NPN Silicon Transistor KTP MJE13009-2 Suitable for Motor Control and Regulators
Key Attributes
Model Number:
MJE13009-2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
9V
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
100W
Transition Frequency(fT):
4MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
12A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
MJE13009-2
Package:
TO-220
Product Description
Product Overview
The MJE13009-2 is an NPN Silicon Transistor designed for high-speed switching applications. It is particularly suitable for use in switching regulators and motor control systems, offering high voltage switching capabilities and fast switching performance.
Product Attributes
- Brand: KTP Semiconductor
- Model: MJE13009-2
- Type: NPN Silicon Transistor
- Package: TO-220
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| VCBO | Collector-Base Voltage | 700 | V | |||
| VCEO | Collector-Emitter Voltage | 400 | V | |||
| VEBO | Emitter-Base Voltage | 9 | V | |||
| IC | Collector Current (DC) | 12 | A | |||
| ICP | Collector Current (Pulse) | 24 | A | |||
| IB | Base Current | 6 | A | |||
| PC | Collector Dissipation (TC=25C) | 100 | W | |||
| TJ | Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature | -65 | ~ | 150 | C | |
| VCEO(sus) | Collector-Emitter Sustaining Voltage | IC = 10mA, IB = 0 | 400 | V | ||
| IEBO | Emitter Cut-off Current | VEB = 9V, IC = 0 | 1 | mA | ||
| hFE | DC Current Gain | VCE = 5V, IC = 5A | 8 | |||
| VCE = 5V, IC = 8A | 6 | |||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = 5A, IB = 1A | 1 | V | ||
| IC = 8A, IB = 1.6A | 1.5 | V | ||||
| IC = 12A, IB = 3A | 3 | V | ||||
| VBE(sat) | Base-Emitter Saturation Voltage | IC = 5A, IB = 1A | 1.2 | V | ||
| IC = 8A, IB = 1.6A | 1.6 | V | ||||
| Cob | Output Capacitance | VCB = 10V, f = 0.1MHz | 180 | pF | ||
| fT | Current Gain Bandwidth Product | VCE = 10V, IC = 0.5A | 4 | MHz | ||
| tON | Turn On Time | VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6 | 1.1 | s | ||
| tSTG | Storage Time | VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6 | 3 | s | ||
| tF | Fall Time | VCC = 125V, IC = 8A, IB1 = - IB2 = 1.6A, RL = 15.6 | 0.7 | s |
2412041501_KTP-MJE13009-2_C42404752.pdf
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