Power MOSFET KIA Semicon Tech KPY3203D P Channel 100A 30V with Low Gate Charge and High Reliability
Key Attributes
Model Number:
KPY3203D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
900pF
Number:
1 P-Channel
Output Capacitance(Coss):
1nF
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
7.55nF
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
KPY3203D
Package:
DFN-8(5x6)
Product Description
KIA SEMICONDUCTORS KPY3203D -100A, -30V P-CHANNEL MOSFET
The KIA SEMICONDUCTORS KPY3203D is a high-performance P-Channel MOSFET designed for demanding applications. It features a low on-resistance (RDS(ON) of 3.5m typ.), super low gate charge, and 100% EAS guaranteed. This device offers excellent CdV/dt effect decline and is available in a Green Device option. Its advanced high cell density Trench technology ensures superior performance and reliability.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KPY3203D
- Package: DFN5*6
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | - | - | V |
| Gate-Source Voltage | VGS | - | - | ±20 | V | |
| Continuous Drain Current | ID | TC=25C | - | - | -100 | A |
| Continuous Drain Current | ID | TC=100C | - | - | -70 | A |
| Continuous Drain Current | ID | TA=25C | - | - | -20 | A |
| Continuous Drain Current | ID | TA=100C | - | - | -14 | A |
| Pulse Drain Current | IDM | Tested | - | - | -400 | A |
| Single Pulse Avalanche Energy | EAS | Tested | - | 312 | - | mJ |
| Avalanche Current | IAS | Tested | - | -79 | - | A |
| Maximum Power Dissipation | PD | TC=25C | - | - | 62.5 | W |
| Maximum Power Dissipation | PD | TC=100C | - | - | 31 | W |
| Maximum Power Dissipation | PD | TA=25C | - | - | 2.4 | W |
| Maximum Power Dissipation | PD | TA=100C | - | - | 1.2 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 175 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | Tested | - | - | 62 | C/W |
| Thermal Resistance, Junction-to-Case | RJC | Tested | - | - | 2.4 | C/W |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V, TJ=25C | - | - | -1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±10 | nA |
| Forward Transconductance | gfs | VDS=-5V, ID=-20A | - | 25 | - | S |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250µA | -1.1 | -1.7 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-30A | - | 2.6 | 3.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-20A | - | 4.2 | 5.4 | mΩ |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 7550 | - | pF |
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | - | 1000 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | - | 900 | - | pF |
| Total Gate Charge | Qg | VDS=-15V, ID=-30A, VGS=-10V | - | 130 | - | nC |
| Gate Source Charge | Qgs | VDS=-15V, ID=-30A, VGS=-10V | - | 20 | - | nC |
| Gate Drain Charge | Qg | VDS=-15V, ID=-30A, VGS=-10V | - | 30 | - | nC |
| Turn-on Delay Time | td(on) | VDS=-15V, ID=-20A, RG=3.3Ω, VGS=-10V | - | 22 | - | nS |
| Turn-on Rise Time | tr | VDS=-15V, ID=-20A, RG=3.3Ω, VGS=-10V | - | 30 | - | nS |
| Turn-Off Delay Time | td(off) | VDS=-15V, ID=-20A, RG=3.3Ω, VGS=-10V | - | 110 | - | nS |
| Turn-Off Fall Time | tf | VDS=-15V, ID=-20A, RG=3.3Ω, VGS=-10V | - | 40 | - | nS |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | -100 | A |
| Forward on voltage | VSD | ISD=-8A, VGS=0V, TJ=25C | - | - | -1 | V |
| Reverse Recovery Time | Trr | IF=-20A, di/dt=100A/us, TJ=25C | - | 50 | - | nS |
| Reverse Recovery Charge | Qrr | IF=-20A, di/dt=100A/us, TJ=25C | - | 54 | - | nC |
2411121110_KIA-Semicon-Tech-KPY3203D_C41369557.pdf
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