Durable N channel MOSFET KIA Semicon Tech KPD7910A designed for motor control and battery management
Key Attributes
Model Number:
KPD7910A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.2nF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
102W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
KPD7910A
Package:
TO-252
Product Description
Product Overview
The KPX7910A is a -28A, -100V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features advanced CRM(CQ) Trench technology, offering extremely low on-resistance (RDS(on)) and an excellent Gate Charge x RDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: KIA
- Part Number: KPX7910A
- Package: TO-252
- Technology: CRM(CQ) advanced Trench technology
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | TC=25 C unless otherwise specified | -100 | V | ||
| Continuous Drain Current | ID | TC=25 C | -28 | A | ||
| Continuous Drain Current | ID | TC=100 C | -17 | A | ||
| Pulsed Drain Current | IDP | (TC = 25C, tp limited by Tjmax) | -112 | A | ||
| Avalanche Energy single pulse | EAS | (L=1mH) | 242 | mJ | ||
| Gate-Source voltage | VGS | 20 | v | |||
| Power dissipation | PD | (TC = 25C) | 102 | w | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 150 | C | ||
| Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) | Tsold | 260 | C | |||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-ambient | RJA | 62 | C/W | |||
| Thermal resistance, Junction-case | RJC | 1.22 | C/W | |||
| Electrical Characteristics (TJ=25C, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | -100 | V | ||
| Gate threshold voltage | VGS(th ) | VDS=VGS,ID=250uA | -1.5 | -2.0 | -2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | Tj=25 C, VDS=-100V,VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | Tj=125 C, VDS=-100V,VGS=0V | -20 | A | ||
| Gate leakage current | IGSS | VGS=-20V,VDS=0V | -100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=-10V,ID=-10A | 60 | 70 | m | |
| Drain-source on-resistance | RDS(on) | VGS=-4.5V,ID=-5A | 70 | 90 | m | |
| Forward Transconductance | gfs | VDS=-5V,ID=-10A | 25 | S | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1MHz | 20 | |||
| Input capacitance | Ciss | VDS=-25V,VGS=0V, F=1MHz | 3800 | pF | ||
| Output capacitance | Coss | VDS=-25V,VGS=0V, F=1MHz | 1200 | pF | ||
| Reverse transfer capacitance | Crss | VDS=-25V,VGS=0V, F=1MHz | 650 | pF | ||
| Turn-on delay time | td(on) | VDD=-50V,ID=-10A, VGS=-10V,RG=2.7 | 10 | ns | ||
| Rise time | tr | VDD=-50V,ID=-10A, VGS=-10V,RG=2.7 | 25 | ns | ||
| Turn-off delay time | td(off) | VDD=-50V,ID=-10A, VGS=-10V,RG=2.7 | 112 | ns | ||
| Fall time | tf | VDD=-50V,ID=-10A, VGS=-10V,RG=2.7 | 75 | ns | ||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDS=-50V,ID=-22A , VGS=-10V, F=1MHz | 52 | nC | ||
| Gate-source charge | Qgs | VDS=-50V,ID=-22A , VGS=-10V, F=1MHz | 13 | nC | ||
| Gate-drain charge | Qg d | VDS=-50V,ID=-22A , VGS=-10V, F=1MHz | 10 | nC | ||
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V,ISD=-10A | -1.5 | V | ||
| Body Diode Continuous Forward Current | IS | TC = 25C | -28 | A | ||
| Reverse recovery time | trr | IF=-10A DlF/dt=100A/s | 35 | ns | ||
| Reverse recovery charge | Qrr | IF=-10A DlF/dt=100A/s | 42 | nC | ||
2409302232_KIA-Semicon-Tech-KPD7910A_C2896661.pdf
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