KIA Semicon Tech KCT012N10N MOSFET Featuring JEDEC Qualification and 100V Drain Source Voltage for UPS Applications
Key Attributes
Model Number:
KCT012N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Pd - Power Dissipation:
431W
Input Capacitance(Ciss):
15.8nF
Output Capacitance(Coss):
1.93nF
Gate Charge(Qg):
260nC@10V
Mfr. Part #:
KCT012N10N
Package:
TOLL-8
Product Description
Product Overview
This product utilizes Geener advanced MOS technology, offering extremely low on-resistance (RDS(on)) and an excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: KMOS Semiconductor
- Technology: Geener advanced MOS
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Part # | VDS (V) | RDS(on) (m) | ID (A) | Avalanche energy, single pulse (mJ) | Ptot (W) | Package | Marking |
| KCX012N10N | 100 | 1.5 | 330 | 540 | 431 | TO-263 | KCX012N10N |
| KCB012N10N | 100 | 1.5 | 330 | 540 | 431 | TOLL | KCB012N10N |
| KCT012N10N | 100 | 1.5 | 330 | 540 | 431 | TOLL | KCT012N10N |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250uA | 2.4 | 3 | 3.6 | V |
| Zero gate voltage drain current | IDSS | VDS=100V,VGS=0V | - | - | 1 | nA |
| Gate-source leakage current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | - | 1.2 | 1.4 | m |
| Drain-source on-state resistance | RDS(on) | VGS=10V, VDS=50V, ID=100A | - | 1.58 | - | m |
| Body Diode Forward Voltage | VSD | VGS=0V,IF=100A | - | 0.85 | 1.1 | V |
| Body Diode Reverse Recovery Time | trr | IF=20A, dI/dt=100A/s | - | 92 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, dI/dt=100A/s | - | 200 | - | nC |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Input Capacitance | Ciss | VGS=0V, VDS =0V, f=1MHz | - | 15800 | - | pF |
| Gate-Source charge | Qgs | VGS=0V, VDS=50V, f=1MHz | - | 76 | - | nC |
| Gate-Drain charge | Qgd | VGS=0V, VDS=50V, f=1MHz | - | 1930 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=50V, f=1MHz | - | 75 | - | pF |
| Turn-on delay time | td(on) | VGS=10V, VDS=50V,RGEN =4.7,ID=100A | - | 260 | - | ns |
| Rise time | tr | VGS=10V, VDS=50V,RGEN =4.7,ID=100A | - | 75 | - | ns |
| Turn-off delay time | td(off) | VGS=10V, VDS=50V,RGEN =4.7,ID=100A | - | 167 | - | ns |
| Fall time | tf | VGS=10V, VDS=50V,RGEN =4.7,ID=100A | - | 68 | - | ns |
| Gate resistance | RG | VGS=0V, VDS =0V, f=1MHz | - | 1 | - | |
| Transconductance | gfs | VDS=5V, ID =50A | - | 81 | 178 | S |
| Total Gate Charge | QG | VGS=10V, VDS=50V, ID=100A | - | 75 | - | nC |
2507111630_KIA-Semicon-Tech-KCT012N10N_C49328631.pdf
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