Low RDS ON 035 typical MOSFET KIA Semicon Tech KNF6450B 13A 500V suitable for power switch applications
Key Attributes
Model Number:
KNF6450B
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
2.155nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
KNF6450B
Package:
TO-220F
Product Description
Product Overview
This is a 13A, 500V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model KNP6450B/KNF6450B. It features fast switching, low gate charge, low reverse transfer capacitances, and a low RDS(ON) of 0.35(typ.) at VGS=10V. It is 100% tested for single pulse avalanche energy. This MOSFET is suitable for power switch circuits in adaptors and chargers.
Product Attributes
- Brand: KIA
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | TO-220 | TO-220F | Unit |
| Absolute Maximum Ratings | ||||
| Drain-to-Source Voltage | VDSS | 500 | 500 | V |
| Gate-to-Source Voltage | VGSS | ±30 | ±30 | V |
| Continuous Drain Current | ID | 13 | 13 | A |
| Pulsed Drain Current | IDM | 52 | 52 | A |
| Single Pulse Avalanche Energy | EAS | 900 | 900 | mJ |
| Power Dissipation | PD | 150 | 48 | W |
| Derating Factor above 25°C | PD | 1.2 | 0.38 | W/°C |
| Maximum Temperature for Soldering | TL | 300 | 300 | °C |
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 150 | -55 to 150 | °C |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.83 | 2.6 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | 100 | °C/W |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | 500 | V |
| BVDSS Temperature Coefficient | ΔBVDSS/ ΔTJ | - | 0.55 | V/°C |
| Drain-to-Source Leakage Current | IDSS | - | 1 | µA |
| Gate-to-Source Leakage Current | IGSS | - | ±100 | nA |
| Drain-to-Source ON Resistance | RDS(ON) | - | 0.35 - 0.5 | Ω |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | 2.0 - 4.0 | V |
| Forward Transconductance | gfs | - | 15 | S |
| Input Capacitance | Ciss | - | 2155 | pF |
| Reverse Transfer Capacitance | Crss | - | 25 | - |
| Output Capacitance | Coss | - | 215 | - |
| Total Gate Charge | Qg | - | 46 | nC |
| Gate-to-Source Charge | Qgs | - | 12 | - |
| Gate-to-Drain (Miller) Charge | Qg | - | 20 | - |
| Turn-on Delay Time | td(ON) | - | 16 | nS |
| Rise Time | trise | - | 26 | - |
| Turn-Off Delay Time | td(OFF) | - | 46 | - |
| Fall Time | tfall | - | 36 | - |
| Continuous Source Current | ISD | - | 13 | A |
| Pulsed Source Current | ISM | - | 52 | A |
| Forward Voltage | VSD | - | 1.5 | V |
| Reverse recovery time | trr | - | 500 | ns |
| Reverse recovery charge | Qrr | - | 4 | µC |
2410121306_KIA-Semicon-Tech-KNF6450B_C20623381.pdf
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