KIA Semicon Tech KNK7880A 27A 800V N Channel MOSFET suitable for electric welders and SMPS designs
Key Attributes
Model Number:
KNK7880A
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
27A
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Input Capacitance(Ciss):
7.28nF
Pd - Power Dissipation:
650W
Output Capacitance(Coss):
660pF
Gate Charge(Qg):
185nC
Mfr. Part #:
KNK7880A
Package:
TO-264
Product Description
Product Overview
The KIA SEMICONDUCTORS 7880A is a 27A, 800V N-CHANNEL MOSFET featuring an advanced planar process, low gate charge for minimized switching loss, and a rugged polysilicon gate structure. It is designed for applications such as BLDC motor drivers, electric welders, and high-efficiency SMPS.
Product Attributes
- Brand: KIA
- Part Number: KNK7880A
- Package: TO-264
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | 800 | V | |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 27 | A | (TC= 25 C) |
| Continuous Drain Current @ Tc=100 C | ID | 17 | A | |
| Pulsed Drain Current at VGS=10V | IDM | 108 | A | 2),4) |
| Single Pulse Avalanche Energy | EAS | 4200 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 3) |
| Power Dissipation | PD | 650 | W | |
| Derating Factor above 25 C | 5.2 | W/C | ||
| Maximum Temperature for Soldering - Leads | TL | 300 | C | at 0.063in (1.6mm) from Case for 10 seconds |
| Maximum Temperature for Soldering - Package Body | TPAK | 260 | C | for 10 seconds |
| Storage Temperature Range | TJ& TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | 0.192 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 55 | C/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | 800 | V | VGS=0V, ID=250uA |
| Drain-to-Source Leakage Current | IDSS | 5 | uA | VDS=800V, VGS=0V |
| Drain-to-Source Leakage Current @ TJ=125C | IDSS | 125 | uA | VDS=640V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-to-Source ON Resistance | RDS(ON) | 280 (typ.), 350 (max.) | m | VGS=10V, ID=13.5A |
| Gate Threshold Voltage | VGS(TH) | 2.5 (min.), 4.5 (max.) | V | VDS=VGS,ID=250uA |
| Forward Transconductance | gFS | 18 | S | VDS=25V,ID=12A |
| Input Capacitance | Ciss | 7280 | pF | VGS=0V,VDS=25V, f=1.0MHZ |
| Reverse Transfer Capacitance | Crss | 35 | pF | |
| Output Capacitance | Coss | 660 | pF | |
| Total Gate Charge | Qg | 185 | nC | VDD=400V,ID=13A, VGS=0~10V |
| Gate-to-Source Charge | Qgs | 42 | nC | |
| Gate-to-Drain (Miller) Charge | Qg d | 62 | nC | |
| Turn-on Delay Time | td(ON) | 56 | nS | VDD=400V, ID=13A, RG=10,VGS=10V |
| Rise Time | trise | 105 | nS | |
| Turn-Off Delay Time | td(OFF) | 82 | nS | |
| Fall Time | tfall | 96 | nS | |
| Continuous Source Current | ISD | 27 | A | Integral PN-diode in MOSFET |
| Pulsed Source Current | ISM | 108 | A | 2) |
| Forward Voltage | VSD | 1.5 | V | IS=27A, VGS=0V |
| Reverse recovery time | trr | 900 | ns | VGS=0V ,IF=27A, diF/dt=-100A/s |
| Reverse recovery charge | Qrr | 2.0 | uC |
2410121234_KIA-Semicon-Tech-KNK7880A_C20623383.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
