Power switching N channel MOSFET KIA Semicon Tech KNB3403C with 30V drain source voltage and low Crss
Key Attributes
Model Number:
KNB3403C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
176pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
1.972nF
Output Capacitance(Coss):
214pF
Gate Charge(Qg):
37.2nC@10V
Mfr. Part #:
KNB3403C
Package:
TO-263
Product Description
Product Overview
This N-CHANNEL MOSFET, model 3403C from KIA SEMICONDUCTORS, offers high performance with a continuous drain current of 80A and a drain-source voltage of 30V. It features very low on-resistance (RDS(ON) as low as 4.3m typ.), low Crss, and fast switching capabilities, making it suitable for PWM applications, power management, and load switching. The device is 100% avalanche tested and boasts improved dv/dt capability.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | DFN3*3/DFN5*6 | TO-252/TO-263 | Unit |
| Drain-source voltage | VDSS | 30 | 30 | V |
| Continuous drain current (TC=25C) | ID | 80 | 80 | A |
| Continuous drain current (TC=100C) | ID | 45 | 45 | A |
| Pulsed drain current | IDM | 320 | 320 | A |
| Gate-source voltage | VGS | ±20 | ±20 | V |
| Single pulse avalanche energy | EAS | 306 | 306 | mJ |
| Power dissipation (TC=25C) | PD | 70 | 83 | W |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | ºC | |
| Maximum lead temperature for soldering purposes | TL | 300 | ºC | |
| Drain-source breakdown voltage | BVDSS | 30 | V | |
| Drain-source leakage current | IDSS | 1 | µA | |
| Gate-source forward leakage | IGSS | ±100 | nA | |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.2 | V | |
| Drain-source on-resistance (VGS=10V, ID=20A) | RDS(on) | 4.3 - 6.0 | 4.5 - 6.0 | mΩ |
| Drain-source on-resistance (VGS=4.5V, ID=20A) | RDS(on) | 6.7 - 9.2 | 7.5 - 9.2 | mΩ |
| Input capacitance | Ciss | 1972 | pF | |
| Output capacitance | Coss | 214 | pF | |
| Reverse transfer capacitance | Crss | 176 | pF | |
| Turn-on delay time | td(on) | 21 | ns | |
| Rise time | tr | 16 | ns | |
| Turn-off delay time | td(off) | 62 | ns | |
| Fall time | tf | 12 | ns | |
| Total gate charge (10V) | Qg | 37.2 | nC | |
| Gate-source charge | Qgs | 5.7 | nC | |
| Gate-drain charge | Qgd | 7.6 | nC | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 80 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 320 | A | |
| Diode forward voltage | VSD | 1.2 | V | |
| Reverse Recovery Time | trr | 32 | nS | |
| Reverse Recovery Charge | Qrr | 12 | nC | |
| Thermal resistance junction-case | RθJC | 1.8 | 1.5 | ºC/W |
2507111630_KIA-Semicon-Tech-KNB3403C_C49328614.pdf
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