Power switching N Channel MOSFET 150A 80V KIA Semicon Tech KNB2808A with tested avalanche reliability
Key Attributes
Model Number:
KNB2808A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V,85A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
530pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.109nF
Output Capacitance(Coss):
995pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
KNB2808A
Package:
TO-263
Product Description
150A, 80V N-CHANNEL MOSFET - KIA SEMICONDUCTORS 2808A
This N-Channel MOSFET from KIA SEMICONDUCTORS, model 2808A, is designed for high-performance switching applications. It offers low on-resistance, 100% avalanche tested reliability, and a rugged construction. Available in lead-free and green (RoHS Compliant) versions, it is suitable for power management in inverter systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 2808A
- Type: N-CHANNEL MOSFET
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | TO-220/TO-263 | TO-247/TO-3P | Units | Conditions |
| Drain-source voltage | VDSS | 80 | V | ||
| Gate-source voltage | VGSS | +25 | V | ||
| Maximum junction temperature | TJ | 175 | C | ||
| Storage temperature range | TSTG | -55 to175 | C | ||
| Diode continuous forward current | IS | 150 | A | TC=25C | |
| Continuous drain current | ID | 150 | 114 | A | TC=25C / TC=100C |
| Pulse drain current* | IDM | 660** | A | TC=25C | |
| Avalanche energy,single pulsed | EAS | 1.1*** | J | L=0.5mH | |
| Maximum power dissipation | PD | 178 | 214 | W | TC=25 C |
| Maximum power dissipation | PD | 89 | 107 | W | TC=100C |
| Thermal resistance,Junction-ambient | RJA | 62.5 | C/W | ||
| Thermal resistance,Junction-case | RJC | 0.7 | C/W | ||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0V,IDS=250A | |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=80V, VGS=0V | |
| Zero gate voltage drain current | IDSS | 10 | A | TJ=85C | |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250A | |
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V | |
| Drain-source on-state resistance | RDS(on) | 4.0 - 4.5 | m | VGS=10V,ID=85A | |
| Gate resistance | Rg | 1.8 | VDS=0V, VGS=0V,f=1MHz | ||
| Diode forward voltage | VSD | 0.8 - 1.2 | V | ISD=85A, VGS=0V | |
| Reverse recovery time | trr | 30 | nS | ISD=85A , dlSD/dt=100A/s | |
| Reverse recovery charge | Qrr | 52 | nC | ||
| Input capacitance | Ciss | 6109 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 995 | pF | ||
| Reverse transfer capacitance | Crss | 530 | pF | ||
| Turn-on delay time | td(on) | 28 | ns | VDD=40V, IDS=85A, RG=6,VGS=10V | |
| Rise time | tr | 18 | ns | ||
| Turn-off delay time | td(off) | 42 | ns | ||
| Fall time | tf | 54 | ns | ||
| Total gate charge | Qg | 152 | nC | VDS=64V, VGS=10V IDS=85A | |
| Gate-source charge | Qgs | 25 | -- | ||
| Gate-drain charge | Qg d | 53 | -- | ||
2410010000_KIA-Semicon-Tech-KNB2808A_C176888.pdf
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