Power MOSFET transistor KIA Semicon Tech KCD3406A optimized for inverter power management and rectification

Key Attributes
Model Number: KCD3406A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
8.5mΩ@10V,13.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
22pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
63W
Input Capacitance(Ciss):
1.065nF
Gate Charge(Qg):
16.8nC@10V
Mfr. Part #:
KCD3406A
Package:
TO-252
Product Description

Product Overview

The KCX3406A is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's LVMOS technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is ideal for secondary synchronous rectification and power management in inverter systems.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part NumberPackageDrain-to-Source Voltage (VDSS)Gate-to-Source Voltage (VGSS)Continuous Drain Current (ID @ TC=25C)Pulsed Drain Current (IDM)Power Dissipation (PD @ TC=25C)RDS(ON) (typ. @ VGS=10V)Input Capacitance (Ciss)Output Capacitance (Coss)Reverse Transfer Capacitance (Crss)Turn-on Delay Time (td(ON))Rise Time (trise)Turn-Off Delay Time (td(OFF))Fall Time (tfall)Total Gate Charge (Qg)Continuous Source Current (ISD)Pulsed Source Current (ISM)Diode Forward Voltage (VSD)Reverse Recovery Time (trr)Reverse Recovery Charge (Qrr)
KCX3406ADFN5*660 V20 V80 A240 A63 W8.5 m1065 pF430 pF22 pF8 nS54 nS19 nS8.8 nS16.8 nC80 A240 A1.4 V52 nS0.05 nC
KCY3406ADFN5*660 V20 V80 A240 A63 W8.5 m1065 pF430 pF22 pF8 nS54 nS19 nS8.8 nS16.8 nC80 A240 A1.4 V52 nS0.05 nC
KCD3406ATO-25260 V20 V80 A240 A63 W8.5 m1065 pF430 pF22 pF8 nS54 nS19 nS8.8 nS16.8 nC80 A240 A1.4 V52 nS0.05 nC

2410121251_KIA-Semicon-Tech-KCD3406A_C5156064.pdf

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