Power MOSFET transistor KIA Semicon Tech KCD3406A optimized for inverter power management and rectification
Product Overview
The KCX3406A is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's LVMOS technology. Its advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance. This device is ideal for secondary synchronous rectification and power management in inverter systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Gate-to-Source Voltage (VGSS) | Continuous Drain Current (ID @ TC=25C) | Pulsed Drain Current (IDM) | Power Dissipation (PD @ TC=25C) | RDS(ON) (typ. @ VGS=10V) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(ON)) | Rise Time (trise) | Turn-Off Delay Time (td(OFF)) | Fall Time (tfall) | Total Gate Charge (Qg) | Continuous Source Current (ISD) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD) | Reverse Recovery Time (trr) | Reverse Recovery Charge (Qrr) |
| KCX3406A | DFN5*6 | 60 V | 20 V | 80 A | 240 A | 63 W | 8.5 m | 1065 pF | 430 pF | 22 pF | 8 nS | 54 nS | 19 nS | 8.8 nS | 16.8 nC | 80 A | 240 A | 1.4 V | 52 nS | 0.05 nC |
| KCY3406A | DFN5*6 | 60 V | 20 V | 80 A | 240 A | 63 W | 8.5 m | 1065 pF | 430 pF | 22 pF | 8 nS | 54 nS | 19 nS | 8.8 nS | 16.8 nC | 80 A | 240 A | 1.4 V | 52 nS | 0.05 nC |
| KCD3406A | TO-252 | 60 V | 20 V | 80 A | 240 A | 63 W | 8.5 m | 1065 pF | 430 pF | 22 pF | 8 nS | 54 nS | 19 nS | 8.8 nS | 16.8 nC | 80 A | 240 A | 1.4 V | 52 nS | 0.05 nC |
2410121251_KIA-Semicon-Tech-KCD3406A_C5156064.pdf
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