80A 60V N Channel Power MOSFET KIA Semicon Tech KCD3406B with Fast Switching and Low On Resistance
Key Attributes
Model Number:
KCD3406B
Product Custom Attributes
Mfr. Part #:
KCD3406B
Package:
TO-252
Product Description
Product Overview
This is an 80A, 60V N-Channel Fast-Switching Power MOSFET from KIA SEMICONDUCTORS, model 3406B. It features advanced SGT technology, low RDS(ON) of 7.8m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. It is 100% Vds and UIS tested, making it suitable for fast-switching applications. Green device is available.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 3406B
- Technology: Advanced SGT
- Origin: KMOS Semiconductor
Technical Specifications
| Parameter | Symbol | DFN5*6 Rating | TO-252 Rating | Unit | Conditions |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | |
| Gate-Source Voltage | VGS | 20 | V | VDS=0V | |
| Continuous Drain Current | ID | 80 (TC=25C) | 80 (TC=25C) | A | TC=25C |
| ID | 50 (TC=100C) | 50 (TC=100C) | A | TC=100C | |
| Pulsed Drain Current | IDM | 260 | A | Current-Pulsed | |
| Total Power Dissipation | PD | 78.9 / 83 | W | TC=25C | |
| Avalanche Energy | EAS | 100 | mJ | VDD=36V, VGS=10V, L=0.5mH, IAS=20A | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.9 | 1.8 | C/W | 1) |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V,VGS=0V | |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | |
| Gate Threshold Voltage | VGS(th) | 1.0 / 1.7 / 2.5 | V | VGS=VDS, ID=250uA | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.8 / 9.5 | m | VGS=10V, ID=20A | |
| RDS(ON) | 10 / 13 | m | VGS=4.5V, ID=15A | ||
| Gate Resistance | Rg | 1.7 | VDS=0V, VGS=0V,f=1.0MHz | ||
| Input Capacitance | Ciss | 900 | pF | VDS=30V , VGS=0V , f=1.0MHz | |
| Output Capacitance | Coss | 330 | pF | ||
| Reverse Transfer Capacitance | Crss | 14 | pF | ||
| Turn-On Delay Time | td(on) | 4 | ns | VDS=30V,VGS=10V, RG=2.0,ID=20A | |
| Rise Time | tr | 3.5 | ns | ||
| Turn-Off DelayTime | td(off) | 14 | ns | ||
| Fall Time | tf | 2.6 | ns | ||
| Total Gate Charge | Qg | 16 | nC | VDS=30V, VGS=10V , ID=20A | |
| Gate-Source Charge | Qgs | 1.1 | nC | ||
| Gate-Drain Charge | Qgd | 5.6 | nC | ||
| Source-Drain Current (Body Diode) | ISD | 80 | A | 1),5) | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=20A,TJ=25C | |
| Reverse Recovery Time | trr | 22 | nS | TJ=25C, IF=20A, di/dt=100A/s | |
| Reverse Recovery Charge | Qrr | 26 | nC | ||
2510171705_KIA-Semicon-Tech-KCD3406B_C52145850.pdf
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