N Channel Fast Switching Power MOSFET 80A 60V KIA Semicon Tech KCY3406B Ideal for Power Applications
Key Attributes
Model Number:
KCY3406B
Product Custom Attributes
Mfr. Part #:
KCY3406B
Package:
DFN-8(5x6)
Product Description
80A, 60V N-Channel Fast-Switching Power MOSFET
This N-Channel Fast-Switching Power MOSFET, model KCY3406B/KCD3406B, offers advanced SGT technology for high-performance applications. It features low RDS(ON), super low gate charge, and excellent CdV/dt effect decline, making it ideal for power management solutions. The device is 100% Vds and UIS tested for reliability.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KCY3406B (DFN5*6), KCD3406B (TO-252)
- Origin: KMOS Semiconductor
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | DFN5*6 | TO-252 | Unit | Conditions | |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDS | 60 | V | VGS=0V | ||
| Gate-to-Source Voltage | VGS | 20 | V | VDS=0V | ||
| Continuous Drain Current | ID | 50 | 50 | A | TC=100C | |
| 80 | 80 | TC=25C | ||||
| Pulsed Drain Current | IDM | 260 | A | Current-Pulsed | ||
| Total Power Dissipation | PD | 78.9 | 83 | W | TC=25C | |
| Avalanche Energy | EAS | 100 | mJ | VDD=36V, VGS=10V, L=0.5mH, IAS=20A | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.9 | 1.8 | C/W | 1) | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V,VGS=0V | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | ||
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA (Typ. 1.7V) | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.8 - 9.5 | m | VGS=10V, ID=20A (Typ. 7.8m) | ||
| 10 - 13 | VGS=4.5V, ID=15A (Typ. 10m) | |||||
| Gate Resistance | Rg | 1.7 | VDS=0V, VGS=0V,f=1.0MHz (Typ.) | |||
| Input Capacitance | Ciss | 900 | pF | VDS=30V , VGS=0V , f=1.0MHz (Typ.) | ||
| Output Capacitance | Coss | 330 | pF | VDS=30V , VGS=0V , f=1.0MHz (Typ.) | ||
| Reverse Transfer Capacitance | Crss | 14 | pF | VDS=30V , VGS=0V , f=1.0MHz (Typ.) | ||
| Turn-On Delay Time | td(on) | 4 | ns | VDS=30V,VGS=10V, RG=2.0,ID=20A (Typ.) | ||
| Rise Time | tr | 3.5 | ns | VDS=30V,VGS=10V, RG=2.0,ID=20A (Typ.) | ||
| Turn-Off DelayTime | td(off) | 14 | ns | VDS=30V,VGS=10V, RG=2.0,ID=20A (Typ.) | ||
| Fall Time | tf | 2.6 | ns | VDS=30V,VGS=10V, RG=2.0,ID=20A (Typ.) | ||
| Total Gate Charge | Qg | 16 | nC | VDS=30V, VGS=10V , ID=20A (Typ.) | ||
| Gate-Source Charge | Qgs | 1.1 | nC | VDS=30V, VGS=10V , ID=20A (Typ.) | ||
| Gate-Drain Charge | Qgd | 5.6 | nC | VDS=30V, VGS=10V , ID=20A (Typ.) | ||
| Source-Drain Current (Body Diode) | ISD | 80 | A | 1),5) | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=20A,TJ=25C (Typ.) | ||
| Reverse Recovery Time | trr | 22 | nS | TJ=25C, IF=20A, di/dt=100A/s (Typ.) | ||
| Reverse Recovery Charge | Qrr | 26 | nC | TJ=25C, IF=20A, di/dt=100A/s (Typ.) | ||
2510171705_KIA-Semicon-Tech-KCY3406B_C52145849.pdf
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