130A 60V N Channel Power MOSFET KIA Semicon Tech KNH2906C with Low RDS ON and Super Low Gate Charge
Key Attributes
Model Number:
KNH2906C
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
RDS(on):
4.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
283pF
Output Capacitance(Coss):
340pF
Input Capacitance(Ciss):
6.5nF
Pd - Power Dissipation:
136W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
KNH2906C
Package:
TO-3P
Product Description
Product Overview
130A, 60V N-Channel Power MOSFET featuring Advanced Trench technology. This device offers low RDS(ON) values, super low gate charge, and excellent CdV/dt effect decline. It is 100% Vds and UIS tested, with a green device option available. Designed for high-power applications requiring efficient switching and robust performance.
Product Attributes
- Brand: KIA
- Origin: KMOS Semiconductor
- Material: N-Channel Power MOSFET
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A, TO-220 | - | 4.6 | 5.8 | m |
| VGS=10V, ID=30A, TO-3P | - | 4.7 | 5.8 | m | ||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1.0MHz | - | 6500 | - | pF |
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1.0MHz | - | 340 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1.0MHz | - | 283 | - | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 120 | - | nC |
| Source-Drain Current (Body Diode) | ISD | 1)5) | - | - | 130 | A |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | TJ=25C, IF=30A, di/dt=100A/s | - | 55 | - | nC |
Ordering Information
| Part Number | Package | Brand |
| KNP2906C | TO-220 | KIA |
| KNH2906C | TO-3P | KIA |
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Drain-to-Source Voltage (VGS=0V | VDS | 60 | V |
| Gate-to-Source Voltage (VDS=0V | VGS | 20 | V |
| Continuous Drain Current | ID | 130 (TC=25C) | A |
| ID | 82 (TC=100C) | A | |
| Pulsed Drain Current | IDM | 440 | A |
| Total Power Dissipation (TC=25C) | PD | 136 | W |
| Avalanche Energy | EAS | 342 | mJ |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C |
Thermal Characteristics
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 1.1 | C/W |
2509041415_KIA-Semicon-Tech-KNH2906C_C51883055.pdf
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