NCHANNEL MOSFET 150A 60V Featuring KIA Semicon Tech KNB2706A for Load Switching and PWM Applications
Key Attributes
Model Number:
KNB2706A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.2V
Reverse Transfer Capacitance (Crss@Vds):
730pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
320W
Gate Charge(Qg):
200nC@10V
Mfr. Part #:
KNB2706A
Package:
TO-263
Product Description
Product Overview
The 150A, 60V N-CHANNEL MOSFET (Model 2706A) from KIA SEMICONDUCTORS is designed for high-performance applications requiring low on-resistance and high ruggedness. It features very low RDS(ON) of 2.8m (typ.) at VGS=10V, fast switching capabilities, and is 100% avalanche tested with improved dv/dt capability. Ideal for PWM applications, power management, and load switching, this MOSFET offers reliable performance in demanding environments.
Product Attributes
- Brand: KIA
- Model: 2706A
- Product Type: N-CHANNEL MOSFET
- Voltage Rating: 60V
- Current Rating: 150A
- Package Options: TO-263, TO-220
Technical Specifications
| Parameter | Symbol | TO-263 | TO-220 | Unit | Conditions |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,ID=250uA | |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | 0.06 | V/C | ID=250uA, Referenced to 25C | |
| Drain-source leakage current | IDSS | 1 | uA | VDS=60V, VGS=0V | |
| Drain-source leakage current | IDSS | 10 | uA | VDS=48V, TC=150C | |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V | |
| Gate threshold voltage | VGS(TH) | 2.2 - 3.6 | V | VDS=VGS,ID=250uA | |
| Drain-source on-resistance | RDS(on) | 2.8 - 3.6 | m | VGS=10V,ID=20A | |
| Input capacitance | Ciss | 8850 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 610 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Reverse transfer capacitance | Crss | 730 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Turn-on delay time | td(on) | 20 | ns | VDD=30V, RG=25, ID=50A | |
| Rise time | tr | 38 | ns | VDD=30V, RG=25, ID=50A | |
| Turn-off delay time | td(off) | 49 | ns | VDD=30V, RG=25, ID=50A | |
| Fall time | tf | 30 | ns | VDD=30V, RG=25, ID=50A | |
| Total gate charge | Qg | 200 | nC | VDS=30V, ID=50A, VGS=10V | |
| Gate-source charge | Qgs | 35 | nC | VDS=30V, ID=50A, VGS=10V | |
| Gate-drain charge | Qg d | 72 | nC | VDS=30V, ID=50A, VGS=10V | |
| Continuous drain current | ID | 150 | 150 | A | TC=25C |
| Continuous drain current | ID | 98 | 98 | A | TC=100C |
| Pulsed drain current | IDM | 450 | A | - | |
| Gate-source voltage | VGS | 20 | V | - | |
| Single pulse avalanche energy | EAS | 552 | mJ | - | |
| Repetitive Avalanche Energy | EAR | 240 | mJ | - | |
| Peak Diode Recovery dv/dt | dv/dc | 4.5 | V/ns | - | |
| Power dissipation | PD | 238 | 320 | W | TC=25C |
| Derate above 25C | - | 2.56 | W/C | - | |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | - | |
| Maximum lead temperature for soldering | TL | 300 | C | 1/8" from case for 5 seconds | |
| Thermal resistance junction-case | RJC | 0.53 | 0.39 | C/W | - |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 62.5 | C/W | - |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 150 | A | - | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 450 | A | - | |
| Diode forward voltage | VSD | 1.2 | V | IS=50A,VGS=0V | |
| Reverse Recovery Time | trr | 62 | nS | VGS=0V,IS=50A, dIF/dt=100A/s | |
| Reverse Recovery Charge | Qrr | 105 | nC | VGS=0V,IS=50A, dIF/dt=100A/s | |
2410121238_KIA-Semicon-Tech-KNB2706A_C7465110.pdf
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