N CHANNEL MOSFET 11A 1500V KIA Semicon Tech KNM62150A designed for pulse circuits capacitor discharge and power supply
Key Attributes
Model Number:
KNM62150A
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
11A
RDS(on):
2.4Ω@10V,5.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 N-channel
Input Capacitance(Ciss):
3.876nF@25V
Pd - Power Dissipation:
312W
Gate Charge(Qg):
83.2nC@10V
Mfr. Part #:
KNM62150A
Package:
TO-247
Product Description
Product Overview
11A, 1500V N-CHANNEL MOSFET designed for high voltage power supplies, capacitor discharge, and pulse circuits. Features include RoHS compliance, low gate charge for minimized switching loss, and a fast recovery body diode.
Product Attributes
- Brand: KIA
- Part Number: KNM62150A
- Package: TO-247
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | 1500 | V | |
| Gate-to-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 11 | A | |
| Pulsed Drain Current | IDM | 44 | A | VGS=10V |
| Single Pulse Avalanche Energy | EAS | 350 | mJ | |
| Maximum Power Dissipation | PD | 312 | W | TC=25°C |
| Derate above 25°C | 2.5 | W/°C | ||
| Soldering Temperature | TL | 300 | °C | Distance of 1.6mm from case for 10 seconds |
| Storage Temperature Range | TJ&TSTG | -55 to 150 | °C | |
| Thermal Resistance, Junction-to-Case | RθJC | 0.4 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | |
| Drain-source breakdown voltage | BVDSS | 1500 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=1500V, VGS=0V |
| Drain-source leakage current | IDSS | 500 | uA | VDS=1200V, TC=125°C |
| Gate-source forward leakage | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-source on-resistance | RDS(on) | 2.4 | Ω | VGS=10V,ID=5.5A (Typ.) |
| Drain-source on-resistance | RDS(on) | 3.2 | Ω | VGS=10V,ID=5.5A (Max.) |
| Gate threshold voltage | VGS(TH) | 2.5 | V | VDS=VGS,ID=250uA (Min.) |
| Gate threshold voltage | VGS(TH) | 4.5 | V | VDS=VGS,ID=250uA (Max.) |
| Gate Resistance | Rg | 1.19 | Ω | f=1 MHz Gate DC Bias=0,Test signal level=20mVopen drain |
| Input capacitance | Ciss | 3876 | pF | VDS=25V,VGS=0V f=1MHz |
| Reverse transfer capacitance | Crss | 170 | pF | VDS=25V,VGS=0V f=1MHz |
| Output capacitance | Coss | 195 | pF | VDS=25V,VGS=0V f=1MHz |
| Total gate charge(10V) | Qg | 83.2 | nC | VDD=750V, ID=11A VGS=0~10V |
| Gate-source charge | Qgs | 21.6 | nC | VDD=750V, ID=11A VGS=0~10V |
| Gate-drain charge | Qgd | 25.4 | nC | VDD=750V, ID=11A VGS=0~10V |
| Turn-on delay time | td(on) | 62 | ns | VDD=750V,VGS=10V, RG=25Ω, ID=11A |
| Rise time | tr | 188 | ns | VDD=750V,VGS=10V, RG=25Ω, ID=11A |
| Turn-off delay time | td(off) | 120 | ns | VDD=750V,VGS=10V, RG=25Ω, ID=11A |
| Fall time | tf | 158 | ns | VDD=750V,VGS=10V, RG=25Ω, ID=11A |
| Continuous Source Current | ISD | 11 | A | Integral PN-diode in MOSFET |
| Pulsed Source Current | ISM | 44 | A | Integral PN-diode in MOSFET |
| Diode forward voltage | VSD | 1.5 | V | IS=11A,VGS=0V |
| Reverse Recovery Time | trr | 449 | nS | VGS=0V,IF=11A, dIF/dt=100A/μs |
| Reverse Recovery Charge | Qrr | 3.58 | nC | VGS=0V,IF=11A, dIF/dt=100A/μs |
2410121317_KIA-Semicon-Tech-KNM62150A_C7465119.pdf
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