130A 40V N Channel MOSFET KIA Semicon Tech KND2904A with Low On Resistance and Fast Switching
Key Attributes
Model Number:
KND2904A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
RDS(on):
2.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
570pF
Output Capacitance(Coss):
580pF
Input Capacitance(Ciss):
6.26nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
KND2904A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS 2904A is a 130A, 40V N-CHANNEL MOSFET designed for high-performance applications. It features very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities. This MOSFET is 100% avalanche tested and offers improved dv/dt capability, making it suitable for PWM applications, load switching, and power management.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | DFN5*6 | TO-252 | TO-263/TO-220 | Unit | Notes |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0V,ID=250uA | ||
| Gate-to-Source Voltage | VGSS | 20 | V | |||
| Continuous drain current | ID | 130 | A | TC=25C | ||
| Continuous drain current | ID | 84 | A | TC=100C | ||
| Pulsed Drain Current | IDM | 400 | A | VGS=10V, 1) | ||
| Single pulse avalanche energy | EAS | 250 | mJ | 2) | ||
| Power dissipation | PD | 54 | 130 | 328 | W | TC=25C |
| Maximum lead temperature for soldering | TL | 300 | C | 1/8" from case for 5 seconds | ||
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |||
| Thermal resistance junction-case | RJC | 2.3 | 0.96 | 0.38 | C/W | |
| Drain-source on-resistance | RDS(on) | 2.0 (typ.) | 2.5 (typ.) | 2.5 (typ.) | m | VGS=10V, ID=20A |
| Drain-source on-resistance | RDS(on) | 2.6 (typ.) | 3.1 (typ.) | 3.1 (typ.) | m | VGS=4.5V, ID=15A |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.3 | V | VDS=VGS,ID=250uA | ||
| Input capacitance | Ciss | 6260 (typ.) | pF | VDS=15V,VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 580 (typ.) | pF | VDS=15V,VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 570 (typ.) | pF | VDS=15V,VGS=0V, f=1MHz | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 130 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 400 | A | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 (typ.) | V | ISD=20A,VGS=0V, TJ=25C | ||
Notes:
1). Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2). EAS condition: TJ=25C, VDD=20V, VG=10V, RG=25, L=0.5mH.
3). Pulse Test: Pulse Width300s, Duty Cycle0.5%
2508261745_KIA-Semicon-Tech-KND2904A_C7465106.pdf
Related Products
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
