Durable KIA Semicon Tech KIA2806AP N channel MOSFET 150A 60V ideal for inverter and UPS applications
Key Attributes
Model Number:
KIA2806AP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-
RDS(on):
4.5mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
857pF
Input Capacitance(Ciss):
4.376nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
KIA2806AP
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS 2806A is a 150A, 60V N-CHANNEL MOSFET designed for switching applications, power management in inverter systems, and UPS. It features a low RDS(on) of 3.5m (typ.) at VGS=10V, 100% avalanche tested, and a reliable, rugged construction. This device is available as a lead-free and green option, compliant with RoHS standards.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 2806A
- Type: N-CHANNEL MOSFET
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Units | Notes |
| Drain-source voltage | VDSS | 60 | V | |
| Gate-source voltage | VGSS | +25 | V | |
| Maximum junction temperature | TJ | 175 | C | |
| Storage temperature range | TSTG | -55 to175 | C | |
| Diode continuous forward current | IS | 150 | A | TC=25C |
| Continuous drain current | ID | 150 (TC=25C), 105 (TC=100C) | A | Package limitation current is 75A, Calculated continuous current based on maximum allowable junction temperature. |
| Pulse drain current | IDM | 580 | A | TC=25C, Pulse width limited by junction temperature. |
| Avalanche energy, single pulsed | EAS | 1200 | mJ | L=1mH, Starting TJ=25C |
| Maximum power dissipation | PD | 230 (TC=25 C), 115 (TC=100C) | W | TO-220/263 package |
| Maximum power dissipation | PD | 330 (TC=25 C), 165 (TC=100C) | W | TO-247/3P package |
| Thermal resistance, Junction-ambient | RJA | 62.5 | C/W | |
| Thermal resistance, Junction-case | RJC | 0.65 | C/W | |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,IDS=250A |
| Zero gate voltage drain current | IDSS | 1 (VDS=48V, VGS=0V), 10 (TJ=85C) | A | |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250A |
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 3.5 - 4.5 | m | VGS=10V,ID=60A, Pulse test |
| Gate resistance | Rg | 0.7 | VDS=0V, VGS=0V,f=1MHz | |
| Diode forward voltage | VSD | 0.8 - 1.2 | V | ISD=60A, VGS=0V, Pulse test |
| Reverse recovery time | trr | 30 | nS | IF=60A ,VDD=50V dlSD/dt=100A/s, Guaranteed by design |
| Reverse recovery charge | Qrr | 50 | nC | Guaranteed by design |
| Input capacitance | Ciss | 4376 | pF | VDS=25V,VGS=0V, f=1MHz, Guaranteed by design |
| Output capacitance | Coss | 857 | pF | Guaranteed by design |
| Reverse transfer capacitance | Crss | 334 | pF | Guaranteed by design |
| Turn-on delay time | td(on) | 28 | ns | VDD=30V, IDS=60A, RG=25,VGS=10V, Guaranteed by design |
| Rise time | tr | 18 | ns | Guaranteed by design |
| Turn-off delay time | td(off) | 42 | ns | Guaranteed by design |
| Fall time | tf | 54 | ns | Guaranteed by design |
| Total gate charge | Qg | 130 | nC | VDS=48V, VGS=10V IDS=60A, Guaranteed by design |
| Gate-source charge | Qgs | 24 | -- | Guaranteed by design |
| Gate-drain charge | Qgd | 47 | -- | Guaranteed by design |
2409302301_KIA-Semicon-Tech-KIA2806AP_C1509096.pdf
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