Switching Power MOSFET KIA Semicon Tech KNP3508A 70A 80V N Channel Device with Low RDS on Resistance
Key Attributes
Model Number:
KNP3508A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9.5mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
175pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
2.9nF@30V
Pd - Power Dissipation:
-
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KNP3508A
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS 3508A is a 70A, 80V N-CHANNEL MOSFET designed for switching applications and power management in inverter systems. It features low on-state resistance (RDS(on)=9.5m typ. @ VGS=10V), 100% avalanche tested reliability, and a rugged construction. Lead-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Series: 3508A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | TO-220/263 | TO-252 |
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250uA | 80 | - | - | V | ||
| Zero gate voltage drain current | IDSS | VDS=24V, VGS=0V | - | - | 1 | A | ||
| TJ=85C | - | - | 30 | |||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V | ||
| Gate leakage current | IGSS | VGS=+25V, VDS=0V | - | - | +100 | nA | ||
| Drain-source on-state resistance | RDS(on) | VGS=10V,IDS=35A | - | 9.5 | 11 | m | ||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.5 | - | |||
| Diode forward voltage | VSD | ISD=20A, VGS=0V | - | 0.8 | 1.3 | V | ||
| Reverse recovery time | trr | ISD=35A , dlSD/dt=100A/s | - | 44 | - | nS | ||
| Reverse recovery charge | Qrr | - | 60 | - | nC | |||
| Input capacitance | Ciss | VDS=30V,VGS=0V, f=1MHz | - | 2900 | - | pF | ||
| Output capacitance | Coss | - | 290 | - | ||||
| Reverse transfer capacitance | Crss | - | 175 | - | ||||
| Turn-on delay time | td(on) | VDD=30V,IDS=1A, RL=30,VGEN=-10V RG=6 | - | 14 | - | ns | ||
| Rise time | tr | - | 11 | - | ||||
| Turn-off delay time | td(off) | - | 51 | - | ||||
| Fall time | tf | - | 22 | - | ||||
| Total gate charge | Qg | VDS=30V,VGS=10V IDS=35A | - | 55 | - | nC | ||
| Gate-source charge | Qgs | - | 12 | - | ||||
| Gate-drain charge | Qg d | - | 16 | - | ||||
| Continuous drain current | ID3 | TC=25C | 70 | A | 70 | 60 | ||
| TC=100C | 46 | 36 | ||||||
| Pulsed drain current | IDP | TC=25C | 240 | A | ||||
| Avalanche current | IAS | 70 | A | |||||
| Drain-source voltage | VDSS | 80 | V | |||||
| Gate-source voltage | VGSS | 25 | V | |||||
| Maximum junction temperature | TJ | 175 | C | |||||
| Storage temperature range | TSTG | -55 to175 | C |
2410010001_KIA-Semicon-Tech-KNP3508A_C455988.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
