N Channel MOSFET KIA Semicon Tech KNP1906A 230A 60V Suitable for Power Supplies and UPS Applications
Key Attributes
Model Number:
KNP1906A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-
RDS(on):
3.5mΩ@10V,80A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
565pF
Number:
-
Output Capacitance(Coss):
1.24nF
Input Capacitance(Ciss):
7.85nF
Pd - Power Dissipation:
254W
Gate Charge(Qg):
182nC@10V
Mfr. Part #:
KNP1906A
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX1906A is a 230A, 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features low RDS(on) to minimize conductive loss and high avalanche current capability. This device is suitable for power supplies, UPS systems, and battery management systems.
Product Attributes
- Brand: KIA
- Part Number: KNX1906A
- Device Type: N-CHANNEL MOSFET
- Lead Status: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDSS | 60 | V | - |
| Gate-source voltage | VGSS | ±25 | V | - |
| Maximum junction temperature | TJ | 150 | °C | - |
| Storage temperature range | TSTG | -55 to 150 | °C | - |
| Continuous drain current (Silicon limit) | ID | 230 | A | TC=25°C |
| Continuous drain current (Package limit) | ID | 160 | A | TC=25°C |
| Continuous drain current (Silicon limit) | ID | 139 | A | TC=100°C |
| Pulse drain current | ID Pulse | 640 | A | TC=25°C, Tp limited by Tjmax |
| Avalanche energy | EAS | 2112 | mJ | - |
| Maximum power dissipation | PD | 254 | W | TC=25 °C |
| Soldering temperature | Tsold | 260 | °C | wave soldering only allowed at leads 1.6mm from case for 10s |
| Thermal resistance, Junction-ambient | RθJA | 84 | °C/W | - |
| Thermal resistance, Junction-case | RθJC | 0.49 | °C/W | - |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, IDS=250μA |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=48V, VGS=0V, TJ=25°C |
| Zero gate voltage drain current | IDSS | 20 | μA | VDS=48V, VGS=0V, TJ=125°C |
| Gate threshold voltage | VGS(th) | 2.0 to 4.0 | V | VDS=VGS, ID=250μA |
| Gate leakage current | IGSS | ±100 | nA | VGS=±25V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 2.2 to 3.5 | mΩ | VGS=10V, ID=80A |
| Gate resistance | Rg | 1.5 | Ω | VDS=0V, VGS=0V, f=1MHz |
| Diode forward voltage | VSD | 0.9 to 1.4 | V | ISD=80A, VGS=0V |
| Diode continuous forward current | IS | 230 | A | - |
| Reverse recovery time | trr | 54 | nS | IF=80A, dlSD/dt=100A/μs |
| Reverse recovery charge | Qrr | 115 | nC | IF=80A, dlSD/dt=100A/μs |
| Input capacitance | Ciss | 7850 | pF | VDS=30V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 1240 | pF | VDS=30V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 565 | pF | VDS=30V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 28 | ns | VDD=30V, IDS=80A, RG=3Ω,VGS=10V |
| Rise time | tr | 120 | ns | VDD=30V, IDS=80A, RG=3Ω,VGS=10V |
| Turn-off delay time | td(off) | 73 | ns | VDD=30V, IDS=80A, RG=3Ω,VGS=10V |
| Fall time | tf | 152 | ns | VDD=30V, IDS=80A, RG=3Ω,VGS=10V |
| Total gate charge | Qg | 182 | nC | VDS=30V, VGS=10V ID=80A |
| Gate-source charge | Qgs | 46 | -- | VDS=30V, VGS=10V ID=80A |
| Gate-drain charge | Qg | 74 | -- | VDS=30V, VGS=10V ID=80A |
2409302232_KIA-Semicon-Tech-KNP1906A_C1509100.pdf
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