70A 80V N channel MOSFET KIA Semicon Tech KNB3508A designed for switching and power management in inverters
Key Attributes
Model Number:
KNB3508A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
175pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
2.9nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
KNB3508A
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS 3508A is a 70A, 80V N-CHANNEL MOSFET designed for switching applications and power management in inverter systems. It features a low on-state resistance of 9.5m (typ.) at VGS=10V, is 100% avalanche tested, and offers a reliable and rugged design. Lead-free and green device options are available, adhering to RoHS compliance.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Code: 3508A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | TO-220/263 | TO-252 |
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250uA | 80 | - | - | V | ||
| Gate-source voltage | VGSS | - | - | ±25 | V | |||
| Maximum junction temperature | TJ | - | - | 175 | ºC | |||
| Storage temperature range | TSTG | -55 | - | 175 | ºC | |||
| Continuous drain current | ID | TC=25ºC | - | - | 70 | A | 70 | 60 |
| Continuous drain current | ID | TC=100ºC | - | - | 46 | A | 46 | 36 |
| Pulsed drain current | IDP | TC=25ºC | - | - | 240 | A | ||
| Avalanche current | IAS | - | - | 70 | A | |||
| Zero gate voltage drain current | IDSS | VDS=24V, VGS=0V | - | - | 1 | µA | ||
| Zero gate voltage drain current | IDSS | TJ=85ºC | - | - | 30 | µA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250µA | 2.0 | 3.0 | 4.0 | V | ||
| Gate leakage current | IGSS | VGS=+25V, VDS=0V | - | - | +100 | nA | ||
| Drain-source on-state resistance | RDS(on) | VGS=10V,IDS=35A | - | 9.5 | 11 | mΩ | ||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.5 | - | Ω | ||
| Diode forward voltage | VSD | ISD=20A, VGS=0V | - | 0.8 | 1.3 | V | ||
| Reverse recovery time | trr | ISD=35A , dlSD/dt=100A/µs | - | 44 | - | nS | ||
| Reverse recovery charge | Qrr | - | 60 | - | nC | |||
| Input capacitance | Ciss | VDS=30V,VGS=0V, f=1MHz | - | 2900 | - | pF | ||
| Output capacitance | Coss | - | 290 | - | pF | |||
| Reverse transfer capacitance | Crss | - | 175 | - | pF | |||
| Turn-on delay time | td(on) | VDD=30V,IDS=1A, RL=30Ω,VGEN=-10V RG=6Ω | - | 14 | - | ns | ||
| Rise time | tr | - | 11 | - | ns | |||
| Turn-off delay time | td(off) | - | 51 | - | ns | |||
| Fall time | tf | - | 22 | - | ns | |||
| Total gate charge | Qg | VDS=30V,VGS=10V IDS=35A | - | 55 | - | nC | ||
| Gate-source charge | Qgs | - | 12 | -- | ||||
| Gate-drain charge | Qg | - | 16 | -- |
2410010001_KIA-Semicon-Tech-KNB3508A_C382149.pdf
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