Power management device KIA Semicon Tech KND2906A 130A 60V N channel MOSFET for UPS and power tools
Key Attributes
Model Number:
KND2906A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
451pF
Number:
-
Output Capacitance(Coss):
926pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
66.34nC@10V
Mfr. Part #:
KND2906A
Package:
TO-252-2
Product Description
Product Overview
The KIA Semiconductors KNX2906A is a 130A, 60V N-CHANNEL MOSFET designed for efficient power management. It features low RDS(on) to minimize conductive loss and high avalanche current capability. This device is suitable for applications requiring robust power handling and efficiency, such as Power Supplies, UPS, and Power Tools.
Product Attributes
- Brand: KIA Semiconductors
- Product Name: KNX2906A
- Package Options: TO-252, TO-263
- Environmental: Lead free and green device available
Technical Specifications
| Parameter | Symbol | To-252 | To-263 | Units | Notes |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,IDS=250A | |
| Gate-source voltage | VGSS | +25 | V | ||
| Junction and storage temperature range | TSTG | -55 to175 | C | ||
| Continuous drain current | ID | 130 (TC=25C) / 90 (TC=100C) | 130 (TC=25C) / 90 (TC=100C) | A | Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. |
| Pulse drain current | IDP | 360 | A | TC=25C, Repetitive rating, pulse width limited by max junction temperature. | |
| Avalanche current | IAS | 25 | A | Starting TJ=25,L=0.5mH,IAS=48A. | |
| Maximum power dissipation | PD | 80 (TC=25 C) / 40 (TC=100C) | 200 (TC=25 C) / 100 (TC=100C) | W | |
| Thermal resistance, Junction-ambient | RJA | 62.5 | C/W | ||
| Thermal resistance, Junction-case | RJC | 1.87 | 0.75 | C/W | |
| Drain-source on-state resistance | RDS(on) | 5.5 (typ.) / 7 (max.) | m | VGS=10V,ID=50A, Pulse test; pulse width<300us duty cycle<2%. | |
| Gate threshold voltage | VGS(th) | 2 (min.) / 3 (typ.) / 4 (max.) | V | VDS=VGS, ID=250A | |
| Gate leakage current | IGSS | +100 (max.) | nA | VGS=+25V, VDS=0V | |
| Diode forward voltage | VSD | 0.88 (typ.) / 1.3 (max.) | V | ISD=50A, VGS=0V | |
| Diode continuous forward current | IS | 50 | A | Package limitation current. | |
| Reverse recovery time | trr | 15.2 | nS | ISD=70A,VDD=50V, dlSD/dt=100A/s | |
| Reverse recovery charge | Qrr | 6.16 | nC | ||
| Input capacitance | Ciss | 3100 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 926 | pF | ||
| Reverse transfer capacitance | Crss | 451 | pF | ||
| Turn-on delay time | td(on) | 20 | ns | VDD=30V, ID=70A, RG=25,VGS=10V | |
| Rise time | tr | 83.7 | ns | ||
| Turn-off delay time | td(off) | 108 | ns | ||
| Fall time | tf | 92.6 | ns | ||
| Total gate charge | Qg | 66.34 | nC | VDS=50V, VGS=10V ID=70A | |
| Gate-source charge | Qgs | 12.35 | -- | ||
| Gate-drain charge | Qg | 33.52 | -- | ||
2411121007_KIA-Semicon-Tech-KND2906A_C709680.pdf
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