130A 60V N Channel MOSFET KIA Semicon Tech KIA2906AH Low Rds on for Power Tool and UPS Applications
Key Attributes
Model Number:
KIA2906AH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-
RDS(on):
7mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
451pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.1nF
Output Capacitance(Coss):
926pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
66.34nC@10V
Mfr. Part #:
KIA2906AH
Package:
TO-3P-3
Product Description
Product Overview
This 130A, 60V N-Channel MOSFET from KIA SEMICONDUCTORS (model 2906A) offers low Rds(on) for minimized conductive loss and high avalanche current, making it suitable for power supply, UPS, and power tool applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Type: N-CHANNEL MOSFET
- Model: 2906A
- Certifications: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Test Conditions | To-220/263 | To-247/3P | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250A | 60 | - | V |
| Gate-source voltage | VGSS | +25 | - | V | |
| Junction and storage temperature range | TSTG | -55 to175 | - | C | |
| Continuous drain current | ID | TC=25C | 130 | - | A |
| Continuous drain current | ID | TC=100C | 90 | - | A |
| Pulse drain current | IDP | TC=25C | 360 | - | A |
| Avalanche current | IAS | 25 | - | A | |
| Maximum power dissipation | EAS | 250 | - | mJ | |
| Maximum power dissipation | PD | TC=25 C | 200 | 300 | W |
| Maximum power dissipation | PD | TC=100C | 90 | 150 | W |
| Thermal resistance,Junction-ambient | RJA | 62.5 | - | C/W | |
| Thermal resistance,Junction-case | RJC | 0.75 | 0.5 | C/W | |
| Zero gate voltage drain current | IDSS | VDS=48V, VGS=0V | - | 1 | A |
| Zero gate voltage drain current | IDSS | TJ=125C | - | 30 | A |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 3 | V |
| Gate leakage current | IGSS | VGS=+25V, VDS=0V | - | +100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS=10V,ID=50A | - | 5.5 | m |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.2 | |
| Diode forward voltage | VSD | ISD=50A, VGS=0V | - | 0.88 | V |
| Diode forward voltage | VSD | ISD=50A, VGS=0V | - | 1.3 | V |
| Diode continuous forward current | IS | - | 50 | A | |
| Reverse recovery time | trr | ISD=70A,VDD=50V, dlSD/dt=100A/s | - | 15.2 | nS |
| Reverse recovery charge | Qrr | - | 6.16 | nC | |
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 3100 | pF |
| Output capacitance | Coss | VDS=25V,VGS=0V, f=1MHz | - | 926 | - |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V, f=1MHz | - | 451 | - |
| Turn-on delay time | td(on) | VDD=30V, ID=70A, RG=25,VGS=10V | - | 20 | ns |
| Rise time | tr | VDD=30V, ID=70A, RG=25,VGS=10V | - | 83.7 | - |
| Turn-off delay time | td(off) | VDD=30V, ID=70A, RG=25,VGS=10V | - | 108 | - |
| Fall time | tf | VDD=30V, ID=70A, RG=25,VGS=10V | - | 92.6 | - |
| Total gate charge | Qg | VDS=50V, VGS=10V ID=70A | - | 66.34 | nC |
| Gate-source charge | Qgs | VDS=50V, VGS=10V ID=70A | - | 12.35 | - |
| Gate-drain charge | Qg | VDS=50V, VGS=10V ID=70A | - | 33.52 | - |
2410010000_KIA-Semicon-Tech-KIA2906AH_C176848.pdf
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