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quality power switching Dual N channel MOSFET KIA Semicon Tech KNE4603A2 with low RDS on and trench technology factory
quality power switching Dual N channel MOSFET KIA Semicon Tech KNE4603A2 with low RDS on and trench technology factory

power switching Dual N channel MOSFET KIA Semicon Tech KNE4603A2 with low RDS on and trench technology

Key Attributes
Model Number: KNE4603A2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14.5mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
59pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
583pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
KNE4603A2
Package:
SOP-8
Product Description

Product Overview

The KNE4603A2 is a high cell density trenched Dual N-channel MOSFET from KIA SEMICONDUCTORS, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It features super low gate charge, green device availability, and excellent Cdv/dt effect decline due to advanced high cell density trench technology. This device meets RoHS and Green Product requirements.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Model: KNE4603A2
  • Type: Dual N-CHANNEL MOSFET
  • Certifications: RoHS, Green Product

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnits
Drain-Source breakdown voltageBVDSSVGS=0V, ID=-250A30--V
Drain-Source breakdown voltage Temperature coefficientBVDSS/ TJReference to 25C, ID=1mA-0.034-V/C
Drain-Source Leakage CurrentIDSSVDS=24V,VGS=0V, TJ=25C--1A
Drain-Source Leakage CurrentIDSSVDS=24V,VGS=0V, TJ=55C--5A
Gate-source leakage currentIGSSVGS=+20V,VDS=0V--100nA
Gate threshold voltageVGS(th)VDS=VGS, ID=250A1.21.52.5V
Gate threshold voltage Temperature coefficientVGS(th)---3.84-mV/C
Static drain-source on- resistanceRDS(on)VGS=10V,ID=7A-14.520m
Static drain-source on- resistanceRDS(on)VGS=4.5V,ID=4A-2028m
Forward transcend ductancegFSVDS=5V, ID=7A-6.2-S
Diode forward voltageVSDVGS=0V,IS=1A, TJ=25C--1.2V
Gate resistanceRgVDS=0V, VGS=0V,f=1MHz-1.042.1
Total gate chargeQgVDS=15V, VGS=4.5V ID =7A-6-nC
Gate-source chargeQgs--2.2-nC
Gate-drain chargeQgd--2-nC
Turn-on delay timetd(on)VDD=15V, RG=3.3, VGS=10V ID=7A-1.2-ns
Rise timetr--40-ns
Turn-off delay timetd(off)--18-ns
Fall timetf--7.2-ns
Input capacitanceCissVGS=0V, VDS=15V F=1.0MHZ-583-pF
Output capacitanceCoss--77-pF
Reverse transfer capacitanceCrss--59-pF
Continuous source currentISVG=VD=0V,Force current--7A
Pulsed source currentISM---35A
Reverse recovery timetrrIF=7A,dl/dt=100A/us, TJ=25C-7.2-nS
Reverse recovery chargeQrr--2.9-nC
ParameterSymbolRatingUnits
Drain-source voltageVDSS30V
Gate-source voltageVGS+20V
Continuous drain currentID7.0A
Continuous drain currentID5.6A
Pulsed drain currentIDM35A
Single pulse avalanche energyEAS20mJ
Avalanche currentIAS20A
Total power dissipationPD1.5W
Junction and storage temperature rangeTJ ,TSTG-55 to150C
Thermal resistance-junction to ambientRJA85C/W
Thermal resistance-junction to caseRJC25C/W

2410010001_KIA-Semicon-Tech-KNE4603A2_C455977.pdf

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