High reliability KIA Semicon Tech KIA2300 MOSFET transistor with 20V drain source voltage and low RDS
Key Attributes
Model Number:
KIA2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@1.8V,2.0A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
-
Input Capacitance(Ciss):
888pF
Output Capacitance(Coss):
144pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16.8nC@4.5V
Mfr. Part #:
KIA2300
Package:
SOT-23
Product Description
Product Overview
KIA SEMICONDUCTORS 2300 is a MOSFET transistor designed for various electronic applications. It offers a drain-source voltage of 20V with varying on-state resistance (RDS(ON)) and continuous drain current (ID) depending on the gate-source voltage (VGS).
Product Attributes
- Brand: KIA SEMICONDUCTORS
Technical Specifications
| Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | VDSS | VGS=0V, ID =250A | 20 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=16V, VGS=0V | - | - | 1.0 | A |
| Gate-body leakage | IGSS | VGS=10V, VGS=0V | - | - | 100 | nA |
| Gate threshold voltage | VGS(th) | VDS= VGS ,ID=250A | 0.5 | 0.78 | 1.0 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=6.0A | - | 28 | 38 | m |
| VGS=4.5V, ID=3.0A | - | 30 | 40 | |||
| VGS=2.5V, ID=2.0A | - | 52 | 55 | |||
| On-state drain current | ID(on) | VDS=5V,VGS=4.5V | 5 | - | - | A |
| Forward transconductance | gfs | VDS=15VDS(on) ,ID=5A | 30 | - | - | S |
| Input capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | - | 888 | - | pF |
| Output capacitance | Coss | VDS=15V, VGS=0V,f=1MHz | - | 144 | - | pF |
| Reverse transfer capacitance | Crss | VDS=15V, VGS=0V,f=1MHz | - | 115 | - | pF |
| Total gate charge | Qg | VDS=10V, ID=3.5A, VGS=4.5V | - | 16.8 | - | nC |
| Gate-source charge | Qgs | VDS=10V, ID=3.5A, VGS=4.5V | - | 2.5 | - | nC |
| Gate-drain charge | Qg d | VDS=10V, ID=3.5A, VGS=4.5V | - | 5.4 | - | nC |
| Turn-on delay time | td(on) | VDD=10V,ID=1A,RG=6, RL=10 | - | 31.8 | - | ns |
| Rise time | tr | VDD=10V,ID=1A,RG=6, RL=10 | - | 14.5 | - | ns |
| Turn-off delay time | td(off) | VDD=10V,ID=1A,RG=6, RL=10 | - | 50.3 | - | ns |
| Fall time | tf | VDD=10V,ID=1A,RG=6, RL=10 | - | 31.9 | - | ns |
| Drain-source diode forward current | IS | Tj=125 | - | - | 1.25 | A |
| Diode forward voltage | VSD | VGS=0V, IS=1.25A | - | 0.825 | 1.3 | V |
| Characteristic | Symbol | Rating | Unit |
| Drain-source voltage | VDS | 20 | V |
| Gate-source voltage | VGS | 10 | V |
| Drain current-continuous | ID | 6.0 | A |
| Peak drain current | IDM | 20 | A |
| Power dissipation | PD | 1.25 | W |
| Thermal resistance,junction-ambient | RthJA | 100 | C /W |
| Operating junction and storage temperature range | Tj ,Tstg | -55150 | C |
2410121520_KIA-Semicon-Tech-KIA2300_C114186.pdf
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