Power switching MOSFET KIA Semicon Tech KIA5N50HD featuring 5A current and 500V voltage specifications
Key Attributes
Model Number:
KIA5N50HD
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
-
Output Capacitance(Coss):
64pF
Input Capacitance(Ciss):
525pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
-
Mfr. Part #:
KIA5N50HD
Package:
TO-252
Product Description
Product Overview
The 5A, 500V N-CHANNEL MOSFET (Model 5N50H) from KIA SEMICONDUCTORS is designed for efficient power switching applications. It features low on-resistance (RDS(on)=1.25 typ.), low gate charge, and is RoHS compliant. This MOSFET is suitable for use in adaptors, chargers, and SMPS standby power supplies.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 5N50H
- Channel Type: N-CHANNEL
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | Min | Typ | Max |
| Drain-source voltage | VDSS | 500 | V | ||||
| Continuous drain current | ID | 5.0* | A | ||||
| Continuous drain current @100 | ID@100 | Figure 3 | A | ||||
| Pulsed drain current, VGS@10V | IDM | Figure 6 | A | ||||
| Power dissipation | PD | 100 | W | ||||
| Derating factor above 25 | 0.8 | W/ | |||||
| Gate-source voltage | VGS | +20 | V | ||||
| Single pulse Avalanche Engergy | EAS | 260 | mJ | ||||
| Pulse avalanche rating | IAS | Figure 8 | A | ||||
| Peak diode recovery dv/dt | dv/dt | 5.0 | V/ns | note*3 | |||
| Maximum temperature for soldering (Leads at 0.063 in from case for 10 seconds) | TL | 300 | C | ||||
| Maximum temperature for soldering (package body for 10 seconds) | TPKG | 260 | C | ||||
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | ||||
| Junction-ambient thermal resistance | RJA | 62 | C/W | 1 cubic foot chamber,free air | |||
| Junction-case thermal resistance | RJC | 1.25 | C/W | Drain lead soldered to water cooled heatsink,PD adjusted for a peak junction temperature of +150 | |||
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS=0V,IDS=250A | |||
| Breakdown voltage temperature coeffcient | BVDSS/TJ | 0.61 | V/ | Reference to 25,ID=250uA | |||
| Drain-source leakage current | IDSS | 1 | A | VDS=500V, VGS=0V | 1 | ||
| Drain-source leakage current @125C | IDSS | 100 | A | VDS=400V, VGS=0V, TJ=125C | |||
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250A | 2.0 | 4.0 | |
| Gate-source forward leakage | IGSS | 1 | uA | VGS=20V | 1 | ||
| Gate-source reverse leakage | -1 | uA | VGS=-20V | -1 | |||
| Static drain-source on-resistance | RDS(on) | 1.25 - 1.5 | VGS=10V,ID=2.5A (note*4) | 1.25 | 1.5 | ||
| Forward transconductance | gfs | 6 | S | VDS=15V, ID=2.5A (note*4) | 6 | ||
| Input capacitance | Ciss | 525 | pF | VDS=25V,VGS=0V f=1MHz | 525 | ||
| Output capacitance | Coss | 64 | pF | VDS=25V,VGS=0V f=1MHz | 64 | ||
| Reverse transfer capacitance | Crss | 12 | pF | VDS=25V,VGS=0V f=1MHz | 12 | ||
| Turn-on delay time | td(on) | 9.0 | ns | VDD=250V, ID=5A, RG=12,VGS=10V | 9.0 | ||
| Rise time | tr | 11 | ns | VDD=250V, ID=5A, RG=12,VGS=10V | 11 | ||
| Turn-off delay time | td(off) | 30 | ns | VDD=250V, ID=5A, RG=12,VGS=10V | 30 | ||
| Fall time | tf | 16 | ns | VDD=250V, ID=5A, RG=12,VGS=10V | 16 | ||
| Total gate charge | Qg | 14 | nC | VDD=250V, ID=5A | 14 | ||
| Gate-source charge | Qgs | 3.0 | nC | VDD=250V, ID=5A | 3.0 | ||
| Gate-drain charge | Qgd | 6.0 | nC | VDD=250V, ID=5A | 6.0 | ||
| Continuous source currentbody biode | IS | 5 | A | Integral pn-diode in MOSFET | 5 | ||
| Maximum pulsed currentbody biode | ISM | 20 | A | 20 | |||
| Diode forward voltage | VSD | 1.5 | V | IS=5A, VGS=0V | 1.5 | ||
| Reverse recovery time | trr | 400 | nS | IF=5A, VGS=0V di/dt=100A/s | 400 | ||
| Reverse recovery charge | Qrr | 1700 | nC | IF=5A, VGS=0V di/dt=100A/s | 1700 |
2409302333_KIA-Semicon-Tech-KIA5N50HD_C123784.pdf
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